Imaging device including photoelectric converter and circuitry including a first capacitance element, a second capacitance element and a transistor

ABSTRACT

An imaging device including a semiconductor substrate; a photoelectric converter stacked on the semiconductor substrate, the photoelectric converter being configured to generate a signal through photoelectric conversion of incident light; a multilayer wiring structure located between the semiconductor substrate and the photoelectric converter; and circuitry located in the multilayer wiring structure and the semiconductor substrate, the circuitry being configured to detect the signal. The circuitry includes a first capacitance element and a second capacitance element; and a first transistor including a first source and a first drain in the semiconductor substrate and a first gate. The first capacitance element includes a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, the multilayer wiring structure includes an insulating layer adjacent to the first capacitance element, and a permittivity of the dielectric film is greater than a permittivity of the insulating layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/401,974, filed May 2, 2019, which is a continuation of U.S. patentapplication Ser. No. 15/878,902, filed on Jan. 24, 2018, now U.S. Pat.No. 10,325,945, which is a continuation of U.S. patent application Ser.No. 14/972,153, filed on Dec. 17, 2015, now U.S. Pat. No. 9,917,119,which claims priority to Japanese Patent Application No. 2014-264695,filed on Dec. 26, 2014; Japanese Patent Application No. 2014-264694,filed on Dec. 26, 2014, Japanese Patent Application No. 2015-167556,filed on Aug. 27, 2015 and Japanese Patent Application No. 2015-207381,filed on Oct. 21, 2015, the entire disclosures each of which are herebyincorporated by reference.

BACKGROUND 1. Technical Field

The present disclosure relates to an imaging device. More specifically,the present disclosure relates to an imaging device that has aphotoelectric conversion unit including a photoelectric conversion filmand stacking on a semiconductor substrate.

2. Description of the Related Art

A multilayer imaging device is proposed as an MOS (Metal OxideSemiconductor) imaging device. In the multilayer imaging device, aphotoelectric conversion unit including a photoelectric conversion filmis stacked on a topmost surface of a semiconductor substrate, and anelectric charge generated through photoelectric conversion in thephotoelectric conversion film is accumulated in an electric chargeaccumulation region (called “floating diffusion”). The imaging devicereads out the accumulated electric charge by using a CCD (Charge CoupledDevice) circuit or a CMOS (Complementary MOS) circuit in thesemiconductor substrate. For example, Japanese Unexamined PatentApplication Publication No. 2009-164604 discloses such an imagingdevice.

In the field of imaging device, there are demands for a noise reduction.In particular, there are demands for a reduction of kTC noise generatedat the time of reset (also referred to as “reset noise”).

SUMMARY

One non-limiting and exemplary embodiment provides the following.

In one general aspect, the techniques disclosed here feature an imagingdevice including a semiconductor substrate; a photoelectric converterstacked on the semiconductor substrate, the photoelectric converterbeing configured to generate a signal through photoelectric conversionof incident light; a multilayer wiring structure located between thesemiconductor substrate and the photoelectric converter; and circuitrylocated in the multilayer wiring structure and the semiconductorsubstrate, the circuitry being configured to detect the signal. The thecircuitry includes a first capacitance element and a second capacitanceelement; and a first transistor including a first source and a firstdrain in the semiconductor substrate and a first gate. The firstcapacitance element includes a first electrode, a second electrode, anda dielectric film between the first electrode and the second electrode,the multilayer wiring structure includes an insulating layer adjacent tothe first capacitance element, and a permittivity of the dielectric filmis greater than a permittivity of the insulating layer.

It should be noted that general or specific embodiments may beimplemented as a system, a method, an integrated circuit, a computerprogram, a storage medium, or any selective combination thereof.

Additional benefits and advantages of the disclosed embodiments willbecome apparent from the specification and drawings. The benefits and/oradvantages may be individually obtained by the various embodiments andfeatures of the specification and drawings, which need not all beprovided in order to obtain one or more of such benefits and/oradvantages.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view illustrating an exemplary circuitconfiguration of an imaging device according to the First Embodiment;

FIG. 2 is a schematic view illustrating an exemplary circuitconfiguration of a unit pixel cell illustrated in FIG. 1;

FIG. 3 is a timing diagram for explaining an example of operation oftransistors in a first mode in the imaging device according to the FirstEmbodiment;

FIG. 4 is a timing diagram for explaining an example of operation oftransistors in a second mode in the imaging device according to theFirst Embodiment;

FIG. 5 is a plan view schematically illustrating an example of layout ofelements in the unit pixel cell;

FIG. 6 is a cross-sectional view schematically illustrating a crosssection taken along the line VI-VI of FIG. 5;

FIG. 7 is a plan view schematically illustrating another example oflayout of the elements in the unit pixel cell;

FIG. 8 is a cross-sectional view schematically illustrating a crosssection taken along the line VIII-VIII of FIG. 7;

FIG. 9 is a schematic cross-sectional view for explaining an exemplarymethod for producing the imaging device;

FIG. 10 is a schematic cross-sectional view for explaining an exemplarymethod for producing the imaging device;

FIG. 11 is a schematic cross-sectional view for explaining an exemplarymethod for producing the imaging device;

FIG. 12 is a schematic cross-sectional view for explaining an exemplarymethod for producing the imaging device;

FIG. 13 is a schematic view illustrating another exemplary circuitconfiguration of the unit pixel cell in the imaging device according tothe First Embodiment;

FIG. 14 is a schematic view illustrating an exemplary circuitconfiguration of a unit pixel cell in an imaging device according to theSecond Embodiment;

FIG. 15 is a schematic view illustrating an exemplary circuitconfiguration of a unit pixel cell in an imaging device according to theThird Embodiment;

FIG. 16 is a timing diagram for explaining an example of operation oftransistors in a first mode in the imaging device according to the ThirdEmbodiment;

FIG. 17 is a timing diagram for explaining an example of operation oftransistors in a second mode in the imaging device according to theThird Embodiment;

FIG. 18 is a schematic view illustrating an exemplary circuitconfiguration of a unit pixel cell in an imaging device according to amodification of the Third Embodiment;

FIG. 19 is a schematic view illustrating an exemplary circuitconfiguration of a unit pixel cell in an imaging device according toanother modification of the Third Embodiment;

FIG. 20 is a schematic cross-sectional view illustrating an example of adevice structure of a unit pixel cell in an imaging device according tothe Fourth Embodiment;

FIG. 21 is a schematic plan view illustrating an example of the way inwhich an upper electrode, a dielectric layer, and a lower electrode aredisposed in a unit pixel cell illustrated in FIG. 20;

FIG. 22 is a schematic cross-sectional view illustrating a still anotherexample of a device structure of a unit pixel cell in the imaging deviceaccording to the Fourth Embodiment;

FIG. 23 is a schematic plan view illustrating an example of the way inwhich an upper electrode, a dielectric layer, and a lower electrode aredisposed in a unit pixel cell illustrated in FIG. 22;

FIG. 24 is a schematic cross-sectional view illustrating a still anotherexample of a device structure of a unit pixel cell in the imaging deviceaccording to the Fourth Embodiment;

FIG. 25 is a schematic plan view illustrating an example of the way inwhich an upper electrode, a dielectric layer, and a lower electrode aredisposed in a unit pixel cell illustrated in FIG. 24; and

FIG. 26 is a schematic view illustrating an example of a configurationof a camera system according to the Fifth Embodiment.

DETAILED DESCRIPTION

The knowledge of the inventors of the present invention is describedbefore detailed description of embodiments of the present disclosure.

A configuration in which three transistors are disposed in a pixel isknown as a readout circuit for reading out an electric chargeaccumulated in an electric charge accumulation region. For example, FIG.4 of Japanese Unexamined Patent Application Publication No. 2011-228621illustrates a signal readout circuit that has an output transistor, arow selection transistor, and a reset transistor that resets floatingdiffusion. Furthermore, a readout circuit in which a transfer transistorthat transfers an electric charge generated through photoelectricconversion to floating diffusion is further provided in a pixel is alsoknown. For example, a signal readout circuit in FIG. 7 of JapaneseUnexamined Patent Application Publication No. 2011-228621 has fourtransistors, i.e., a reset transistor, an output transistor, a rowselection transistor, and a transistor for electric charge transfer. Outof these four transistors, the fourth transistor is connected between apixel electrode and floating diffusion. The fourth transistor is atransfer transistor that transfers an electric charge generated throughphotoelectric conversion and collected by the pixel electrode to thefloating diffusion. Hereinafter, a readout circuit that has a transfertransistor in a pixel is sometimes referred to as a “4Tr readoutcircuit”. Meanwhile, a readout circuit that has no transfer transistorin a pixel is sometimes referred to as a “3Tr readout circuit”. Theentire contents of Japanese Unexamined Patent Application PublicationNo. 2011-228621 are hereby incorporated by reference.

It is known that in a so-called CCD image sensor or CMOS image sensor inwhich a photodiode is formed in a semiconductor substrate, the influenceof kTC noise can be removed by applying correlated double sampling (CDS)to a 4Tr readout circuit. However, according to the studies of theinventors of the present invention, it is difficult to remove theinfluence of kTC noise in a multilayer imaging device by this method.

In a multilayer imaging device, a metal wire or a metal layer istypically interposed between a photoelectric conversion unit and asemiconductor substrate to electrically connect the photoelectricconversion unit and the semiconductor substrate. It is thereforedifficult to completely transfer an electric charge collected by a pixelelectrode to floating diffusion. Therefore, it cannot be said thatsimple application of a method in which a transfer transistor isprovided in a pixel and correlated double sampling is applied iseffective for a multilayer imaging device. It is desired that kTC noisebe reduced in a multilayer imaging device.

One aspect of the present disclosure is summarized as follows.

[Item 1]

An imaging device including: a unit pixel cell comprising: aphotoelectric converter that generates an electric signal throughphotoelectric conversion of incident light, the photoelectric convertercomprising a first electrode, a second electrode, and a photoelectricconversion film that is located between the first electrode and thesecond electrode, the first electrode being located on a light receivingside of the photoelectric conversion film, a signal detection circuitthat detects the electric signal, the signal detection circuitcomprising a first transistor a gate of which is connected to the secondelectrode and a second transistor one of a source and a drain of whichis connected to the second electrode, the first transistor amplifyingthe electric signal, and a capacitor circuit comprising a firstcapacitor having a first capacitance value and a second capacitor havinga second capacitance value larger than the first capacitance value, thefirst capacitor and the second capacitor being serially connected toeach other, the capacitor circuit being provided between the secondelectrode and a reference voltage; and a feedback circuit comprising thefirst transistor and an inverting amplifier, the feedback circuitnegatively feeding back the electric signal to the other of the sourceand the drain of the second transistor via the first transistor and theinverting amplifier. According to the arrangement, kTC noise that occursin a reset operation in a pixel can be effectively reduced by thecapacitor circuit that is serially connected to the photoelectricconverter.

[Item 2]

The imaging device according to Item 1, wherein the first capacitor isconnected between the source and the drain of the second transistor.

[Item 3]

An imaging device including: a unit pixel cell comprising: aphotoelectric converter that generates an electric signal throughphotoelectric conversion of incident light, the photoelectric convertercomprising a first electrode, a second electrode, and a photoelectricconversion film that is located between the first electrode and thesecond electrode, the first electrode being located on a light receivingside of the photoelectric conversion film, a signal detection circuitthat detects the electric signal, the signal detection circuitcomprising a first transistor a gate of which is connected to the secondelectrode and a second transistor one of a source and a drain of whichis connected to the second electrode, the first transistor amplifyingthe electric signal, and a capacitor circuit comprising a firstcapacitor having a first capacitance value and a second capacitor havinga second capacitance value larger than the first capacitance value, thefirst capacitor and the second capacitor being serially connected toeach other, the capacitor circuit being provided between the secondelectrode and a reference voltage, the first capacitor being connectedbetween the source and the drain of the second transistor; and afeedback circuit that negatively feeds back the electric signal to theother of the source and the drain of the second transistor. According tothe arrangement, the second transistor can be used as both a resettransistor and a gain switching transistor. This allows cells to beminiaturized. Furthermore, it is possible to reduce a transistorjunction leakage to an electric charge accumulation node, therebyreducing a dark current.

[Item 4]

The imaging device according to any one of Items 1 through 3, whereinthe second capacitor is connected to at least one of the source and thedrain of the second transistor.

[Item 5]

The imaging device according to Item 3, wherein an amount of change of avoltage of the second electrode is switched by turning on and off thesecond transistor. According to the arrangement, it is possible toswitch the sensitivity of the imaging device.

[Item 6]

The imaging device according to any one of Items 1 through 5, whereinthe signal detection circuit further comprises a third transistor thatselectively transmits output of the first transistor to the invertingamplifier.

[Item 7]

The imaging device according to any one of Items 1 through 6, whereinthe signal detection circuit further comprises a fourth transistor thatselectively transmits output of the inverting amplifier to the other ofthe source and the drain of the second transistor. According to thearrangement, the feedback circuit can be selectively formed by thesecond transistor.

[Item 8]

The imaging device according to any one of Items 1 through 6, whereinthe signal detection circuit further comprises a fourth transistor thatis connected between the source and the drain of the second transistorand selectively transmits the output of the inverting amplifier to thefirst capacitor.

[Item 9]

The imaging device according to any one of Items 3 through 8, wherein afeedback circuit comprises the first transistor and an invertingamplifier, the feedback circuit negatively feeding back the electricsignal to the other of the source and drain of the second transistor viathe first transistor and the inverting amplifier.

[Item 10]

The imaging device according to Item 3, wherein the first capacitor andthe second transistor are connected in parallel to each other.

[Item 11]

An imaging device including: a unit pixel cell including: aphotoelectric converter that performs photoelectric conversion ofincident light, a signal detection circuit that detects a signal of thephotoelectric converter, and a capacitor circuit in which a firstcapacitor and a second capacitor whose capacitance value is larger thanthe first capacitor are serially connected to each other, thephotoelectric converter having a photoelectric conversion film, a firstelectrode formed on a light-receiving surface of the photoelectricconversion film, and a second electrode formed on a surface of thephotoelectric conversion film that is opposite to the first electrode,the signal detection circuit including a first transistor that amplifiesa signal voltage according to an voltage of the second electrode andoutputs the amplified signal voltage and a second transistor, one of asource and a drain of the second transistor being connected to thesecond electrode, the capacitor circuit being provided between thesecond electrode and a reference voltage, the first capacitor beingconnected between the source and the drain of the second transistor, andan amount of change of the voltage of the second electrode beingswitched by turning on and off the second transistor. According to thearrangement, it is possible to provide an imaging device that can switchthe imaging sensitivity.

[Item 12]

The imaging device according to Item 11, wherein the second transistoris switched on and off in accordance with an imaging mode.

[Item 13]

The imaging device according to Item 12, wherein the imaging modeincludes a mode for imaging a bright subject and a mode for imaging adark subject.

[Item 14]

An imaging device including: a unit pixel cell including: aphotoelectric converter that performs photoelectric conversion ofincident light and a signal detection circuit that detects a signal ofthe photoelectric converter, the photoelectric converter having aphotoelectric conversion film, a first electrode formed on alight-receiving surface of the photoelectric conversion film, and asecond electrode formed on a surface of the photoelectric conversionfilm that is opposite to the first electrode, the signal detectioncircuit including an amplifier transistor, a reset transistor, a firstcapacitor, and a second capacitor having a capacitance value larger thanthat of the first capacitor, a gate of the amplifier transistor beingconnected to the second electrode and one of a source and a drain of thereset transistor being connected to the second electrode, the amplifiertransistor and the reset transistor being formed on an identicalsemiconductor substrate, the second capacitor having a first insulatingfilm that is provided on part of the semiconductor substrate and a thirdelectrode that faces part of the semiconductor substrate via the firstinsulating film, the first capacitor having a second insulating filmthat is formed on the third electrode and a fourth electrode that isconnected to the second electrode, at least part of the fourth electrodeoverlapping the third electrode via the second insulating film whenviewed from the normal to the semiconductor substrate.

According to the arrangement of Item 14, kTC noise that occurs due toreset can be reduced while suppressing an increase in capacitance valueof the entire signal electric charge accumulation region.

[Item 15]

The imaging device according to Item 14, further including a feedbackcircuit that negatively feeds back output of the signal detectioncircuit, an output wire of the feedback circuit being connected to theother of the source and the drain of the reset transistor.

According to the arrangement of Item 15, kTC noise that has occurred canbe cancelled in a relatively short period.

[Item 16]

The imaging device according to Item 14 or 15, wherein part of thesemiconductor substrate is connected to a voltage source that supplies avoltage for sensitivity adjustment.

According to the arrangement of Item 16, it is possible to control thevoltage of an electric charge accumulation node in which a signalelectric charge is accumulated, and it is therefore possible to adjustthe sensitivity of the imaging device.

[Item 17]

The imaging device according to any one of Items 14 through 16, whereinthe third electrode is connected to the other of the source and thedrain of the reset transistor.

According to the arrangement of Item 17, it is possible to selectwhether to connect the second capacitor to the electric chargeaccumulation node via the first capacitor or connect the secondcapacitor to the electric charge accumulation node via the resettransistor by switching ON and OFF of the reset transistor.

[Item 18]

The imaging device according to any one of Items 14 through 17, whereinsignal detection circuit has an address transistor that is formed on thesemiconductor substrate and that supplies output of the amplifiertransistor as input to the feedback circuit in accordance with an inputsignal.

According to the arrangement of Item 18, reset and/or noise cancellingcan be performed by selecting one of a plurality of unit pixel cellsthat share a feedback wire.

[Item 19]

The imaging device according to any one of Items 14 through 18, whereinthe fourth electrode is part of a wiring layer that connects the gate ofthe amplifier transistor and one of the source and the drain of thereset transistor.

According to the arrangement of Item 19, it is possible to form thefirst capacitor in the unit pixel cell without increasing the number ofsteps.

[Item 20]

The imaging device according to any one of Items 14 through 19, whereinthe third electrode and the fourth electrode are made of polysilicon.

According to the arrangement of Item 20, it is possible to provide ahigh-precision first capacitor having a flat CV characteristic.

[Item 21]

The imaging device according to any one of Items 14 through 20, furtherincluding a fifth electrode that overlaps the third electrode via thesecond insulating film and has a third capacitor electrically connectedto part of the semiconductor substrate.

According to the arrangement of Item 21, it is possible to further forma capacitor that is electrically connected to the second capacitorwithout adding a special step. This makes it possible to obtain a largercomposite capacitance, thereby making it possible to more effectivelyreduce kTC noise.

[Item 22]

An imaging device including: a unit pixel cell including: aphotoelectric converter that performs photoelectric conversion ofincident light and a signal detection circuit that detects a signalgenerated by the photoelectric converter, the photoelectric converterhaving a photoelectric conversion film, a first electrode formed on alight-receiving surface of the photoelectric conversion film, and asecond electrode formed on a surface of the photoelectric conversionfilm that is opposite to the first electrode, the signal detectioncircuit including an amplifier transistor, a reset transistor, a firstcapacitor, and a second capacitor having a capacitance value larger thanthat of the first capacitor, a gate of the amplifier transistor beingconnected to the second electrode and one of a source and a drain of thereset transistor being connected to the second electrode, the amplifiertransistor and the reset transistor being formed on an identicalsemiconductor substrate, the second capacitor having a third electrodedisposed between the semiconductor substrate and the second electrode, afourth electrode disposed farther from the second electrode than thethird electrode, and a first dielectric layer disposed between the thirdelectrode and the fourth electrode.

According to the arrangement of Item 22, kTC noise that occurs due toreset can be reduced while suppressing an increase in capacitance valueof the entire signal electric charge accumulation region.

[Item 23]

The imaging device according to Item 22, wherein the fourth electrode ofthe second capacitor is an impurity region formed on the semiconductorsubstrate; the first capacitor includes a second dielectric layer; atleast part of one of electrodes of the first capacitor overlaps thethird electrode when viewed from the normal to the semiconductorsubstrate; the second dielectric layer of the first capacitor isdisposed between the one of the electrodes and the third electrode.

According to the arrangement of Item 23, it is possible to form a secondcapacitor having a relatively high capacitance while suppressing anincrease in the number of production steps.

[Item 24]

The imaging device according to Item 23, wherein one of the electrodesis part of a wiring layer that connects the gate of the amplifiertransistor and one of the source and the drain of the reset transistor.

According to the arrangement of Item 24, it is possible to form a firstcapacitor in a unit pixel cell without increasing the number of steps.

[Item 25]

The imaging device according to Item 23 or 24, further including a fifthelectrode that overlaps the third electrode via the second dielectriclayer and that has a third capacitor electrically connected to thefourth electrode.

According to the arrangement of Item 25, it is possible to further forma capacitor that is electrically connected to the second capacitorwithout adding a special step. This makes it possible to obtain a largercomposite capacitance, thereby making it possible to more effectivelyreduce kTC noise.

[Item 26]

The imaging device according to any one of Items 22 through 25, whereinthe third electrode is connected to the other of the source and thedrain of the reset transistor.

According to the arrangement of Item 26, it is possible to selectwhether to connect the second capacitor to the electric chargeaccumulation node via the first capacitor or connect the secondcapacitor to the electric charge accumulation node via the resettransistor by switching ON and OFF of the reset transistor.

[Item 27]

The imaging device according to any one of Items 22 through 26, furtherincluding a feedback circuit that negatively feeds back output of thesignal detection circuit, an output line of the feedback circuit beingconnected to the other of the source and the drain of the resettransistor.

According to the arrangement of Item 27, kTC noise that is occurred canbe cancelled in a relatively short period.

[Item 28]

The imaging device according to Items 27, wherein the signal detectioncircuit has an address transistor that is formed on the semiconductorsubstrate and that supplies output of the amplifier transistor as inputto the feedback circuit in accordance with an input signal.

According to the arrangement of Item 28, reset and/or noise cancellingcan be performed by selecting one of a plurality of unit pixel cellsthat share a feedback wire.

[Item 29]

The imaging device according to any one of Items 22 through 28, whereinthe fourth electrode is connected to a voltage source that supplies avoltage for sensitivity adjustment.

According to the arrangement of Item 29, it is possible to control thevoltage of an electric charge accumulation node in which a signalelectric charge is accumulated, and it is therefore possible to adjustthe sensitivity of the imaging device.

Embodiments of the present disclosure are described below in detail withreference to the drawings. Note that each of the embodiments belowillustrates a general or specific example. Numerical values, shapes,materials, constituent elements, the way in which the constituentelements are disposed and connected, steps, the order of steps in theembodiments below are examples and do not limit the present disclosure.Various aspects described in the present specification can be combinedas long as no contradiction occurs. Among the constituent elements inthe embodiments below, constituent elements that are not described inindependent claims showing highest concepts are described as optionalconstituent elements. In the following description, constituent elementsthat have substantially the same functions are indicated by commonreference signs, and description thereof may be omitted.

First Embodiment

FIG. 1 schematically illustrates an exemplary circuit configuration ofan imaging device according to the First Embodiment. An imaging device101 illustrated in FIG. 1 includes a plurality of unit pixel cells 11and a peripheral circuit. The plurality of unit pixel cells 11 aredisposed in a two-dimensional array on a semiconductor substrate andform a photosensitive region (pixel region). The semiconductor substrateis not limited to a substrate that is entirely made of a semiconductor.The semiconductor substrate may be, for example, an insulating substratethat has a semiconductor layer on the side on which the photosensitiveregion is formed.

In the example illustrated in FIG. 1, the plurality of unit pixel cells11 are arranged in a row direction and a column direction. The “rowdirection” and “column direction” as used herein refer to a direction inwhich rows extend and a direction in which columns extend, respectively.That is, the vertical direction of the paper on which FIG. 1 is drawn isthe column direction, and the horizontal direction of the paper is therow direction. The plurality of unit pixel cells 11 may be disposed in aone-dimensional array. In other words, the imaging device 101 can be aline sensor.

Each of the unit pixel cells 11 is connected to a power source wire 22.A predetermined power source voltage is supplied to each of the unitpixel cells 11 via the power source wire 22. As described later indetail, each of the unit pixel cells 11 includes a photoelectricconversion unit having a photoelectric conversion film and stacking onthe semiconductor substrate. As illustrated in FIG. 1, the imagingdevice 101 includes an accumulation control wire 17 for applying anidentical constant voltage to all of the photoelectric conversion units.

The peripheral circuit of the imaging device 101 includes a verticalscanning circuit (also referred to as a “row scanning circuit”) 16, aload circuit 19, a column signal processing circuit (also referred to asa “row signal accumulation circuit”) 20, a horizontal signal readoutcircuit (also referred to as a “column scanning circuit”) 21, and aninverting amplifier 24. In the configuration illustrated in FIG. 1, thecolumn signal processing circuit 20, the load circuit 19, and theinverting amplifier 24 are disposed for each column of the unit pixelcells 11 that are disposed in a two-dimensional array. That is, in thisexample, the peripheral circuit includes a plurality of column signalprocessing circuits 20, a plurality of load circuits 19, and a pluralityof inverting amplifiers 24.

The vertical scanning circuit 16 is connected to an address signal wire30 and a reset signal wire 26. The vertical scanning circuit 16 selectsa row of a plurality of unit pixel cells 11 by applying a predeterminedvoltage to the address signal wire 30. This executes readout of signalvoltages of the selected unit pixel cells 11 and reset of pixelelectrodes that will be described later.

In the example illustrated in FIG. 1, the vertical scanning circuit 16is also connected to a feedback control wire 28 and a sensitivityadjustment wire 32. As described later, the vertical scanning circuit 16applies a predetermined voltage to the feedback control wire 28. Thiscan form a feedback circuit that negatively feeds back output of theunit pixel cells 11. Furthermore, the vertical scanning circuit 16 cansupply a predetermined voltage to the plurality of unit pixel cells 11via the sensitivity adjustment wire 32. As described later in detail, inthe present disclosure, each of the unit pixel cells 11 has one or morecapacitors in a pixel. The term “capacitor” as used herein refers to astructure in which a dielectric such as an insulating film is sandwichedbetween electrodes. The term “electrode” as used herein is not limitedto an electrode made of a metal and is broadly interpreted asencompassing a polysilicon layer and the like. The term “electrode” asused herein may be part of the semiconductor substrate.

The unit pixel cells 11 disposed in each column are electricallyconnected to the column signal processing circuit 20 via a verticalsignal wire 18 corresponding to the column. The load circuit 19 iselectrically connected to the vertical signal wire 18. The column signalprocessing circuit 20 performs noise suppression signal processingrepresented by correlated double sampling, analog-digital conversion (ADconversion), and the like. The horizontal signal readout circuit 21 iselectrically connected to the plurality of column signal processingcircuits 20 that correspond to the columns of the unit pixel cells 11.The horizontal signal readout circuit 21 sequentially reads out a signalfrom the plurality of column signal processing circuits 20 and suppliesthe signal to a horizontal common signal wire 23.

In the configuration illustrated in FIG. 1, the plurality of invertingamplifiers 24 are provided so as to correspond to the respectivecolumns. A negative-side input terminal of each of the invertingamplifiers 24 is connected to a corresponding vertical signal wire 18. Apredetermined voltage (e.g., a positive voltage of 1 V or close to 1 V)Vref is supplied to a positive-side input terminal of the invertingamplifier 24. An output terminal of the inverting amplifier 24 isconnected to the plurality of unit pixel cells 11 which are connected tothe negative-side input terminal of the inverting amplifier 24 via afeedback wire 25 provided corresponding to each column. The invertingamplifier 24 constitutes part of the feedback circuit that negativelyfeeds back output from the unit pixel cells 11. The inverting amplifier24 may be called a feedback amplifier. The inverting amplifier 24includes a gain adjusting terminal 24 a that changes inverting amplifiergain. Operation of the inverting amplifier 24 will be described later.

FIG. 2 illustrates an exemplary circuit configuration of each of theunit pixel cells 11 illustrated in FIG. 1. The unit pixel cell 11includes a photoelectric conversion unit 15 and a signal detectioncircuit SC.

The photoelectric conversion unit 15 typically has a structure in whicha photoelectric conversion film 15 b is sandwiched between a firstelectrode 15 a and a second electrode (pixel electrode) 15 c. Asdescribed later with reference to the drawings, the photoelectricconversion film 15 b is stacked on the semiconductor substrate on whichthe unit pixel cells 11 are formed. The photoelectric conversion film 15b is made of an organic material or an inorganic material such asamorphous silicon. The photoelectric conversion film 15 b may include alayer made of an organic material and a layer made of an inorganicmaterial.

The first electrode 15 a is provided on a light-receiving surface sideof the photoelectric conversion film 15 b. The first electrode 15 a ismade of a transparent conductive material such as ITO. The secondelectrode 15 c is provided on a surface of the photoelectric conversionfilm 15 b on the opposite side of the first electrode 15 a. The secondelectrode 15 c collects an electric charge generated throughphotoelectric conversion in the photoelectric conversion film 15 b. Thesecond electrode 15 c is made of metal such as aluminum or copper, ametal nitride, polysilicon that is doped with impurities to beelectrically conductive, or the like.

As illustrated in FIG. 2, the first electrode 15 a is connected to theaccumulation control wire 17, and the second electrode 15 c is connectedto an electric charge accumulation node (also referred to as a “floatingdiffusion node”) 44. By controlling the voltage of the first electrode15 a via the accumulation control wire 17, any one of hole and electronof a hole-electron pair generated through photoelectric conversion canbe collected by the second electrode 15 c. In a case where a hole isused as a signal electric charge, the voltage of the first electrode 15a need just be made higher than that of the second electrode 15 c. Thecase where a hole is used as a signal electric charge is described belowas an example. For example, a voltage of approximately 10V is applied tothe first electrode 15 a via the accumulation control wire 17. Thiscauses a signal electric charge to be accumulated in the electric chargeaccumulation node 44. Needless to say, an electron may be used as thesignal electric charge.

The signal detection circuit SC of the unit pixel cell 11 includes anamplifier transistor (first transistor) 34 and a first reset transistor(second transistor) 36. The unit pixel cell 11 includes a capacitorcircuit 45 in which a first capacitor (first capacitor) 41 and a secondcapacitor (second capacitor) 42 are connected in series. In theconfiguration illustrated in FIG. 2, the second capacitor 42 has alarger capacitance value than the first capacitor 41. In theconfiguration illustrated in FIG. 2, one of a source and a drain of thefirst reset transistor 36 and one of electrodes of the first capacitor41 are connected to the electric charge accumulation node 44. That is,one of the source and the drain of the first reset transistor 36 and oneof the electrodes of the first capacitor 41 have electrical connectionwith the second electrode 15 c. The other of the source and drain of thefirst reset transistor 36 and the other of the electrodes of the firstcapacitor 41 are connected to one of electrodes of the second capacitor42. That is, in this embodiment, the first capacitor and the first resettransistor are connected in parallel. This may cause junction leak oftransistor against the electric charge accumulation node 44 to bereduced. Accordingly, dark current may be reduced. Hereinafter, a nodeincluding a connection point between the first capacitor 41 and thesecond capacitor 42 is sometimes referred to as a reset drain node 46.

Out of the electrodes of the second capacitor 42, an electrode that isnot connected to the reset drain node 46 is connected to the sensitivityadjustment wire 32. The voltage of the sensitivity adjustment wire 32 isset, for example, to 0 V (reference voltage). The voltage of thesensitivity adjustment wire 32 need not be fixed during operation of theimaging device 101. For example, a pulse voltage may be supplied fromthe vertical scanning circuit 16. As described later, the sensitivityadjustment wire 32 can be used for control of the voltage of theelectric charge accumulation node 44. Needless to say, the voltage ofthe sensitivity adjustment wire 32 may be fixed during operation of theimaging device 101.

As illustrated in FIG. 2, the gate of the amplifier transistor 34 isconnected to the electric charge accumulation node 44. In other words,the gate of the amplifier transistor 34 has electric connection with thesecond electrode 15 c. One of a drain and a source (the drain in thecase of an N-channel MOS) of the amplifier transistor 34 is connected tothe power source wire (source follower power source) 22, and the otherof the drain and the source of the amplifier transistor 34 is connectedto the vertical signal wire 18. The amplifier transistor 34 and the loadcircuit 19 (not illustrated in FIG. 2, see FIG. 1) constitute a sourcefollower circuit. The amplifier transistor 34 amplifies a signalgenerated by the photoelectric conversion unit 15.

As illustrated in FIG. 2, the unit pixel cell 11 includes an addresstransistor (third transistor) 40. A source or a drain of the addresstransistor 40 is connected to one of the source and drain of theamplifier transistor 34 which one is not connected to the power sourcewire 22. The gate of the address transistor 40 is connected to theaddress signal wire 30. In the configuration illustrated in FIG. 2, theaddress transistor 40 constitutes part of the signal detection circuitSC.

A voltage that varies depending on the amount of signal electric chargeaccumulated in the electric charge accumulation node 44 is applied tothe gate of the amplifier transistor 34. The amplifier transistor 34amplifies this voltage. The voltage amplified by the amplifiertransistor 34 is selectively read out by the address transistor 40 as asignal voltage.

In the configuration illustrated in FIG. 2, the unit pixel cell 11further includes a second reset transistor (fourth transistor) 38. Oneof a source and a drain of the second reset transistor 38 is connectedto the reset drain node 46, and the other of the source and the drain ofthe second reset transistor 38 is connected to the feedback wire 25.That is, in the configuration illustrated in FIG. 2, one of the sourceand drain of the first reset transistor 36 which one is connected to thereset drain node 46 is connected to the feedback wire 25 via the secondreset transistor 38. The gate of the second reset transistor 38 isconnected to the feedback control wire 28. As described later in detail,by controlling the voltage of the feedback control wire 28, a feedbackcircuit FC that negatively feeds back output of the signal detectioncircuit SC can be formed.

Note that each of the amplifier transistor 34, the first resettransistor 36, the address transistor 40, and the second resettransistor 38 may be an N-channel MOS or may be a P-channel MOS. It isnot necessary that all of these transistors are either N-channel MOS orP-channel MOS. A case where the amplifier transistor 34, the first resettransistor 36, the address transistor 40, and the second resettransistor 38 are N-channel MOS is described below. Note onlyfield-effect transistors (FETs) but also bipolar transistors can be usedas the transistors.

Outline of Operation of Imaging Device 101

Next, an example of operation of the imaging device 101 is describedwith reference to the drawings. As described below, according to theconfiguration illustrated in FIG. 2, two operation modes that aredifferent in sensitivity can be switched by appropriately controllingthe gate voltage of the first reset transistor 36 and the gate voltageof the second reset transistor 38. The two operation modes are a firstmode in which imaging with relatively high sensitivity is possible and asecond mode in which imaging with relatively low sensitivity ispossible.

First, an outline of operation of the imaging device 101 in the firstmode is described. The first mode is a mode suitable for imaging underlow illuminance. Under low illuminance, high sensitivity is useful.However, in a case where sensitivity is relatively high, there is a riskof amplification of noise. According to the embodiment of the presentdisclosure, it is possible to reduce and/or remove the influence of kTCnoise while achieving relatively high sensitivity.

FIG. 3 is a timing diagram for explaining an example of operation of thetransistors in the first mode. In FIG. 3, ADD, RST1, RST2, and GCNTschematically illustrate examples of changes of the gate voltage of theaddress transistor 40, the gate voltage of the first reset transistor36, the gate voltage of the second reset transistor 38, and the voltageapplied to the gain adjusting terminal 24 a of the inverting amplifier24, respectively. In the example illustrated in FIG. 3, at a time t0,the address transistor 40, the first reset transistor 36, and the secondreset transistor 38 are OFF. The voltage of the gain adjusting terminal24 a of the inverting amplifier 24 is a predetermined value. Forsimplification, description of operation of an electronic shutter isomitted below.

First, the address transistor 40 is turned ON (a time t1) by controllingthe voltage of the address signal wire 30. At this point in time, asignal electric charge accumulated in the electric charge accumulationnode 44 is read out.

Next, the first reset transistor 36 and the second reset transistor 38are turned ON (a time t2) by controlling the voltage of the reset signalwire 26 and the voltage of the feedback control wire 28. This causes theelectric charge accumulation node 44 and the feedback wire 25 to beconnected to each other via the first reset transistor 36 and the secondreset transistor 38, thus forming the feedback circuit FC thatnegatively feeds back the output of the signal detection circuit SC.Interposing the second reset transistor 38 between the reset drain node46 and the feedback wire 25 enables the feedback circuit that feeds backthe signal of the photoelectric conversion unit 15 to be formedselectively by the reset transistor 38. In this example, formation ofthe feedback circuit FC is performed for one of the plurality of unitpixel cells 11 that share the feedback wire 25. The unit pixel cell 11for which formation of the feedback circuit FC is performed can beselected by control of the gate voltage of the address transistor 40.Accordingly, reset and/or noise cancelling, which are described below,can be performed to the desired unit pixel cell 11.

The feedback circuit FC is a negative-feedback amplifier circuit thatincludes the amplifier transistor 34, the inverting amplifier 24, andthe second reset transistor 38. The address transistor 40, which wasturned ON at the time t1, supplies output of the amplifier transistor 34as input to the feedback circuit FC.

Since the electric charge accumulation node 44 and the feedback wire 25are electrically connected to each other, the electric chargeaccumulation node 44 is reset. At this point in time, the output of thesignal detection circuit SC is negatively fed back, thereby causing thevoltage of the vertical signal wire 18 to converge to the voltage Vrefapplied to the positive-side input terminal of the inverting amplifier24. That is, in this example, a reference voltage at the time of resetis the voltage Vref. In the configuration illustrated in FIG. 2, thevoltage Vref can be set to any value within a range between a powersource voltage (e.g., 3.3 V) and grounding (0 V). In other words, anyvoltage within a certain range (e.g., a voltage other than the powersource voltage) can be used as the reference voltage at the time ofreset.

Furthermore, at the time t2, the gain of the inverting amplifier 24 isreduced by controlling the voltage of the gain adjusting terminal 24 aof the inverting amplifier 24. In the inverting amplifier 24, theproduct G×B of the gain G and the band B is constant. Accordingly, thereduction of the gain G makes the band B wider (makes a cutoff frequencyhigher). Therefore, convergence described above can be performed fasterin the negative-feedback amplifier circuit.

Next, the first reset transistor 36 is turned OFF (a time t3).Hereinafter, a period from the point in time at which the first resettransistor 36 and the second reset transistor 38 are turned ON at thetime t2 to the point in time at which the first reset transistor 36 isturned OFF (the period from the time t2 to the time t3 in FIG. 3) issometimes referred to as a “reset period”. In FIG. 3, the reset periodis schematically indicated by the arrow Rst. When the first resettransistor 36 is turned OFF at the time t3, kTC noise occurs. Therefore,the kTC noise is added to the voltage of the electric chargeaccumulation node 44 after reset.

As is clear from FIG. 2, the state where the feedback circuit FC isformed is maintained during the period in which the second resettransistor 38 is ON. This allows the kTC noise that occurs when thefirst reset transistor 36 is turned OFF at the time t3 to be cancelleddown to 1/(1+A) where A is the gain of the feedback circuit FC.

In this example, the voltage of the vertical signal wire 18 immediatelybefore the first reset transistor 36 is turned OFF (immediately beforethe start of noise cancelling) is almost equal to the voltage Vrefapplied to the negative-side input terminal of the inverting amplifier24. By thus making the voltage of the vertical signal wire 18 at thestart of noise cancelling close to the target voltage Vref after noisecancelling, it is possible to cancel the kTC noise in a relatively shorttime. Hereinafter, a period from the point in time at which the firstreset transistor 36 is turned OFF to the point in time at which thesecond reset transistor 38 is turned OFF (the period from the time t3 tothe time t4) is sometimes referred to as a “noise cancelling period”. InFIG. 3, the noise cancelling period is schematically indicated by thearrow Ncl.

At the time t3, the gain of the inverting amplifier 24 is in a reducedstate. Therefore, noise cancelling can be performed fast in an initialstage of the noise cancelling period.

Subsequently, at a time t3′, the gain of the inverting amplifier 24 isincreased by controlling the voltage of the gain adjusting terminal 24 aof the inverting amplifier 24. This further reduces the noise level.Since the product G×B of the gain G and the band B is constant, theincrease in the gain G narrows the band B (lowers the cutoff frequency).That is, convergence in the negative-feedback amplifier circuit takestime. However, since the voltage of the vertical signal wire 18 has beenalready controlled to the vicinity of the convergence level during theperiod between t3 and t3′, the width of the voltage that should beconverged has been made small, and therefore an increase in convergencetime caused by the narrowed band can be suppressed.

As described above, according to the embodiment of the presentdisclosure, the kTC noise that occurs when the reset transistor isturned OFF can be reduced, and the kTC noise that has occurred can becancelled in a relatively short time.

Next, the second reset transistor 38 is turned OFF (the time t4), andexposure is performed for a predetermined period. When the second resettransistor 38 is turned OFF at the time t4, kTC noise occurs. The sizeof kTC noise added to the voltage of the electric charge accumulationnode 44 at this point in time is (Cfd/C2)^(1/2)×(C1/(C1+Cfd)) times aslarge as that in a case where the first capacitor 41 and the secondcapacitor 42 are not provided in the unit pixel cell 11 and the secondreset transistor 38 is directly connected to the electric chargeaccumulation node 44. In this formula, Cfd, C1, and C2 represent thecapacitance value of the electric charge accumulation node 44, thecapacitance value of the first capacitor 41, and the capacitance valueof the second capacitor 42. Note that “x” in this formula representsmultiplication. As the capacitance value C2 of the second capacitor 42becomes larger, the noise itself that occurs becomes smaller, and as thecapacitance value C1 of the first capacitor 41 becomes smaller, theattenuation rate becomes larger. Therefore, according to the embodimentof the present disclosure, the kTC noise that occurs when the secondreset transistor 38 is turned OFF can be sufficiently reduced byappropriately setting the capacitance value C1 of the first capacitor 41and the capacitance value C2 of the second capacitor 42.

In FIG. 3, the period of exposure is schematically indicated by thearrow Exp. During the period of exposure, the reset voltage in which thekTC noise has been cancelled is read out at a predetermined timing (atime t5). Note that since it takes a short time to read out the resetvoltage, readout of the reset voltage may be performed while the addresstransistor 40 is in an ON state.

A signal from which fixed noise has been removed can be obtained bycalculating a difference between the signal read out during the periodbetween the time t1 and the time t2 and the signal read out at the timet5. In this way, a signal from which the kTC noise and the fixed noisehave been removed can be obtained.

Note that the second capacitor 42 is connected to the electric chargeaccumulation node 44 via the first capacitor 41 in a state in which thefirst reset transistor 36 and the second reset transistor 38 are OFF.Assume that the electric charge accumulation node 44 and the secondcapacitor 42 are directly connected to each other without the firstcapacitor 41. In this case, the capacitance value of the entire signalelectric charge accumulation region in the case where the secondcapacitor 42 is directly connected is (Cfd+C2). That is, in a case wherethe second capacitor 42 has a relatively large capacitance value C2, thecapacitance value of the entire signal electric charge accumulationregion is also large, and therefore a high conversion gain (i.e., a highSN ratio) cannot be obtained.

In view of this, in the embodiment of the present disclosure, the secondcapacitor 42 is connected to the electric charge accumulation node 44via the first capacitor 41. In such a configuration, the capacitancevalue of the entire signal electric charge accumulation region isexpressed by (Cfd+(C1C2)/(C1+C2)). In a case where the first capacitor41 has a relatively small capacitance value C1 and the second capacitor42 has a relatively large capacitance value C2, the capacitance value ofthe entire signal electric charge accumulation region is approximately(Cfd+C1). That is, the increase of the capacitance value of the entiresignal electric charge accumulation region is small. In this way, in acase where the second capacitor 42 is connected to the electric chargeaccumulation node 44 via the first capacitor 41 having a relativelysmall capacitance value, a decrease in conversion gain can besuppressed.

Next, an outline of operation of the imaging device 101 in the secondmode in which imaging with relatively low sensitivity is possible isdescribed with reference to FIG. 4. The second mode is a mode suitablefor imaging under high illuminance. Under high illuminance, lowsensitivity is more advantageous. Under relatively low sensitivity, theinfluence of noise is small, but a large capacitance value of the entiresignal electric charge accumulation region is required.

FIG. 4 is a timing diagram for explaining an example of operation of thetransistors in the second mode. In the first mode described withreference to FIG. 3, the electric charge accumulation node 44 is resetby using the first reset transistor 36. Meanwhile, in the second mode,the electric charge accumulation node 44 is reset by using the secondreset transistor 38 while keeping the ON state of the first resettransistor 36 as described below.

As illustrated in FIG. 4, in the second mode, the first reset transistor36 is always ON. At a time t1, the address transistor 40 is turned ON asin the first mode. At this point in time, a signal electric chargeaccumulated in the electric charge accumulation node 44 is read out. Thevoltage of the gain adjusting terminal 24 a of the inverting amplifier24 is a predetermined value.

Next, the second reset transistor 38 is turned ON (a time t2). Thisforms the feedback circuit FC that negatively feeds back the output ofthe signal detection circuit SC, thus resetting the electric chargeaccumulation node 44. A reference voltage at the time of reset is thevoltage Vref applied to the positive-side input terminal of theinverting amplifier 24.

Furthermore, at the time t2, the gain of the inverting amplifier 24 isreduced by controlling the voltage of the gain adjusting terminal 24 aof the inverting amplifier 24. Since the product G×B of the gain G andthe band B is constant in the inverting amplifier 24, the reduction inthe gain G widens the band B (increases the cutoff frequency).Therefore, convergence described above can be performed faster in thenegative-feedback amplifier circuit.

Next, the second reset transistor 38 is turned OFF (a time t4). When thesecond reset transistor 38 is turned OFF, kTC noise occurs. In thisexample, at the time t4, the gain of the inverting amplifier 24 is in areduced state. Therefore, convergence in the negative-feedback amplifiercircuit can be performed fast. At the time t2, the gain of the invertingamplifier 24 may be increased by controlling the voltage of the gainadjusting terminal 24 a of the inverting amplifier 24. In this case,convergence in the negative-feedback amplifier circuit takes time, butthe band B can be narrowed (the cutoff frequency can be lowered). Thevoltage of the gain adjusting terminal 24 a (in other words, the gain ofthe inverting amplifier 24) need just be appropriately set inconsideration of an allowable time for noise reduction.

Then, exposure is performed for a predetermined period. During exposure,a reset voltage is read out at a predetermined timing (a time t5).

In the second mode, no noise cancelling period exists. However, in thesecond mode used for imaging under high illuminance, shot noise isdominant, and the influence of kTC noise is small. A signal from whichfixed noise has been removed can be obtained by calculating a differencebetween the signal read out in the period between the time t1 and thetime t2 and the signal read out at the time t5.

As is clear from the above description, in the configuration illustratedin FIG. 2, the first reset transistor 36 has both a function of a resettransistor that resets the electric charge accumulation node 44 and afunction of a switch that switches the first mode and the second mode.This relatively easily allows unit pixel cells to be miniaturized. Inthis example, by switching ON and OFF of the first reset transistor 36,it is possible to switch whether to connect the second capacitor 42 tothe electric charge accumulation node 44 via the first reset transistor36 or connect the second capacitor 42 to the electric chargeaccumulation node 44 via the first capacitor 41. That is, switching ONand OFF of the first reset transistor 36 enables an amount of change ofthe voltage of the second electrode 15 c to be switched, and enablessensitivity of the imaging device to be switched. In the configurationillustrated in FIG. 2, the first reset transistor 36 may thus be used asa gain switching transistor. The second capacitor 42 has both a functionof reducing the kTC noise in the first mode and a function of increasingthe capacitance value of the entire signal electric charge accumulationregion. According to the embodiment of the present disclosure, a dynamicrange can be increased with a simple configuration while suppressing anincrease in the number of elements in a pixel. This is useful especiallyfor miniaturization of pixels.

(Device Structure of Unit Pixel Cell 11 and Method for Producing ImagingDevice 101)

Next, an example of a device structure of the unit pixel cell 11 isdescribed with reference to FIGS. 5 and 6.

FIG. 5 schematically illustrates an example of layout of elements in theunit pixel cell 11. FIG. 6 schematically illustrates cross section takenalong the line VI-VI of FIG. 5. As described above, the unit pixel cells11 are arranged on the semiconductor substrate. In the followingdescription, an example in which a P-type silicon (Si) substrate is usedas a semiconductor substrate 2 (see FIG. 6) is described.

In the configuration illustrated in FIG. 5, four transistors, i.e., theamplifier transistor 34, the first reset transistor 36, the second resettransistor 38, and the address transistor 40 are disposed in the unitpixel cell 11. The unit pixel cells 11 are separated from each other byan element separation region 2 s formed in the semiconductor substrate2.

In this example, both of the amplifier transistor 34 and the first resettransistor 36 are formed on the semiconductor substrate 2. Furthermore,in this example, the second reset transistor 38 and the addresstransistor 40 are also formed on the semiconductor substrate 2. Forexample, the second reset transistor 38 includes impurity regions(N-type regions in this example) 2 d formed in the semiconductorsubstrate 2. Each of these impurity regions 2 d functions as the sourceor the drain of the second reset transistor 38. The impurity regions 2 dare typically diffusion layers formed in the semiconductor substrate 2.Hereinafter, the impurity regions 2 d in the semiconductor substrate 2are sometimes referred to as “source/drain diffusion layers 2 d”. In theconfiguration illustrated in FIG. 5, one of the two source/draindiffusion layers 2 d that constitute the source and the drain of thesecond reset transistor 38 is connected to the feedback wire 25 (notillustrated in FIG. 5, see FIG. 2) via a polysilicon plug sp1, apolysilicon layer s1, and a contact plug cp1.

The first capacitor 41 and the second capacitor 42 are also formed onthe semiconductor substrate 2. In the configuration illustrated in FIG.5, the second capacitor 42 occupies a relatively large area in the unitpixel cell 11. This achieves a relatively large capacitance value. Inthe present embodiment, the first capacitor 41 is formed so as tooverlap the second capacitor 42 when viewed from the normal to thesemiconductor substrate as illustrated in FIG. 5. As described later indetail, an upper electrode 41 w of the first capacitor 41 is part of awire (conductive layer) that electrically connects the source or thedrain (the source/drain diffusion layer 2 d) of the first resettransistor 36 and a gate electrode 34 e of the amplifier transistor 34.

See FIG. 6. As illustrated in FIG. 6, the unit pixel cell 11 has thephotoelectric conversion unit 15 on the semiconductor substrate 2. Inthe example illustrated in FIG. 6, interlayer insulating layers 4 s, 4a, 4 b, and 4 c are staked on the semiconductor substrate 2, and thephotoelectric conversion film 15 b of the photoelectric conversion unit15 is stacked on the interlayer insulating layers 4 s, 4 a, 4 b, and 4c. The first electrode 15 a is provided on the light-receiving surface15 h of the photoelectric conversion film 15 b on which light from asubject is incident. The second electrode 15 c is disposed on a surfaceopposite to the light-receiving surface 15 h. The second electrodes 15 cof the plurality of unit pixel cells 11 are electrically separated fromone another.

In the configuration illustrated in FIG. 6, the semiconductor substrate2 has a well 2 w (a P-type impurity region in this example) having arelatively high acceptor concentration and the source/drain diffusionlayers 2 d (N-type impurity regions in this example). As illustrated inFIG. 6, the second reset transistor 38 includes two source/draindiffusion layers 2 d, a gate insulating film 38 g formed on thesemiconductor substrate 2, and a gate electrode 38 e formed on the gateinsulating film 38 g. A channel region 38 c is formed between the twosource/drain diffusion layers 2 d that serve as the source and thedrain. Similarly, the first reset transistor 36 includes twosource/drain diffusion layers 2 d, a gate insulating film 36 g formed onthe semiconductor substrate 2, and a gate electrode 36 e formed on thegate insulating film 36 g. A channel region 36 c is formed between thetwo source/drain diffusion layers 2 d that serve as the source and thedrain. In the example illustrated in FIG. 6, the first reset transistor36 and the second reset transistor 38 share one of the source/draindiffusion layers 2 d. Similarly, the amplifier transistor 34 includestwo source/drain diffusion layers 2 d, a gate insulating film 34 gformed on the semiconductor substrate 2, and a gate electrode 34 eformed on the gate insulating film 34 g. Note that in FIG. 6, the twosource/drain diffusion layers 2 d in the amplifier transistor 34 are notillustrated, and the gate insulating film 34 g, the gate electrode 34 e,and a channel region 34 c formed between the two source/drain diffusionlayers 2 d are illustrated. The address transistor 40 (see FIG. 5) canalso have a configuration similar to the amplifier transistor 34.

The semiconductor substrate 2 has the element separation region 2 s forelectrical separation between elements. In this example, the pair offirst reset transistor 36 and second reset transistor 38 and the pair ofamplifier transistor 34 and address transistor 40 are separated fromeach other by the element separation region 2 s (see FIG. 5).

The semiconductor substrate 2 has an electrode region 42 c that issurrounded by the element separation region 2 s and is thus electricallyseparated from the four transistors (the amplifier transistor 34, thefirst reset transistor 36, the second reset transistor 38, and theaddress transistor 40) of the unit pixel cell 11.

In the configuration illustrated in FIG. 6, the second capacitor 42includes a dielectric layer (first dielectric layer) 42 g provided onthe electrode region 42 c and an upper electrode 42 e that faces part ofthe semiconductor substrate 2 via the dielectric layer 42 g. The upperelectrode 42 e is electrically connected to one of the source and drainof the first reset transistor 36 which one is not connected to theelectric charge accumulation node 44.

In the present embodiment, the second capacitor 42 is a so-called MIScapacitor. However, as described later, the upper electrode 42 e of thesecond capacitor 42 is not an electrode made of a metal but an electrodemade of polysilicon. The part of the semiconductor substrate 2 thatfaces the upper electrode 42 e functions as one of the electrodes in thesecond capacitor 42.

The electrode region 42 c is electrically connected to the sensitivityadjustment wire 32 (see FIG. 2). A predetermined voltage is applied froma voltage source (the vertical scanning circuit 16 in this example) tothe electrode region 42 c via the sensitivity adjustment wire 32. Thevoltage of the electric charge accumulation node 44 can be controlled bycontrolling the voltage of the electrode region 42 c. In other words,the sensitivity of the imaging device 101 can be adjusted by adjustingthe voltage supplied to the electrode region 42 c via the sensitivityadjustment wire 32.

Note that the shape and area of the dielectric layer 42 g need not beidentical to those of the electrode region 42 c when viewed from thenormal to the semiconductor substrate 2. The dielectric layer 42 g neednot cover the whole electrode region 42 c. The dielectric layer 42 g mayalso be formed on the element separation region 2 s that surrounds theelectrode region 42 c. The electrode region 42 c may be formed, forexample, by ion implantation as a region having a higher impurityconcentration than the well 2 w. Alternatively, the electrode region 42c may be formed as a region of a conductivity type different from thatof the well 2 w.

As illustrated in FIG. 6, the upper electrode 41 w electrically connectsthe source or the drain (source/drain diffusion layer 2 d) of the firstreset transistor 36 and the gate electrode 34 e of the amplifiertransistor 34. In the configuration illustrated in FIG. 6, the upperelectrode 41 w is electrically connected to the second electrode 15 cvia a contact plug cpa, a wiring layer 6 s, a via va, a wiring layer 6a, a via vb, a wiring layer 6 b, and a via vc. Typically, the contactplug cpa, the wiring layers 6 s, 6 a, and 6 b, and the vias va throughvc are made of a metal such as copper. The polysilicon plug sp2, theupper electrode 41 w, the contact plug cpa, the wiring layers 6 s, 6 a,and 6 b, the vias va through vc, and one of the source and drain (thedrain in this example) of the first reset transistor 36 function as anelectric charge accumulation region.

As illustrated in FIG. 6, the upper electrode 41 w extends to a regionabove the upper electrode 42 e of the second capacitor 42. The firstcapacitor 41 is formed by the upper electrode 41 w, the upper electrode42 e, and an insulating film (second dielectric layer) 41 g sandwichedbetween the upper electrode 41 w and the upper electrode 42 e. In otherwords, the first capacitor 41 includes the upper electrode 42 e of thesecond capacitor 42, the dielectric layer 41 g formed on the upperelectrode 42 e, and the upper electrode 41 w connected to the secondelectrode 15 c of the photoelectric conversion unit 15. At least part ofthe upper electrode 41 w of the first capacitor 41 overlaps the upperelectrode 42 e via the dielectric layer 41 g when viewed from the normalto the semiconductor substrate 2.

In this example, the first capacitor 41 and the second capacitor 42share one of the two electrodes for formation of a capacitor. Note thatthe dielectric layer 41 g can be part of the interlayer insulating layer4 s. That is, the dielectric layer 41 g may be part of the interlayerinsulating layer formed on the semiconductor substrate 2 or may be aseparate insulating film (or insulating layer) different from theinterlayer insulating layer.

The upper electrode 41 w of the first capacitor 41 is made ofpolysilicon as with the upper electrode 42 e of the second capacitor 42.A CV curve of a capacitor that has a structure in which a dielectric issandwiched between two electrodes made of polysilicon has a flat part ina relatively wide voltage range. A voltage between the electrodes of thefirst capacitor 41 exhibits a relatively large fluctuation as thevoltage of the electric charge accumulation node 44 changes inaccordance with a light amount. Formation of the two electrodes thatconstitute the first capacitor 41 by using polysilicon is useful since ahigh-precision capacitor having a flat CV characteristic can be achievedwhile suppressing an increase in element size. Furthermore, as describedlater, an advantage of suppressing an increase in the number of steps inan imaging device production process can be obtained.

Another example of a device structure in the First Embodiment isdescribed with reference to FIGS. 7 and 8.

FIG. 7 schematically illustrates another example of layout of theelements in the unit pixel cell 11. FIG. 8 schematically illustrates across section taken along the line VIII-VIII of FIG. 7. Theconfiguration illustrated in FIGS. 7 and 8 is different from thatdescribed with reference to FIGS. 5 and 6 in that the unit pixel cell 11illustrated in FIGS. 7 and 8 further includes a third capacitor 43.

As illustrated in FIGS. 7 and 8, the third capacitor 43 includes anupper electrode 43 e disposed above the upper electrode 42 e of thesecond capacitor 42. In the configuration illustrated in FIGS. 7 and 8,the upper electrode 43 e is electrically connected to the electroderegion 42 c of the semiconductor substrate 2, which constitutes part ofthe second capacitor 42, via a contact plug cp3. As described later, theupper electrode 43 e of the third capacitor 43 faces the upper electrode42 e of the second capacitor 42 via the dielectric layer 43 g. That is,the third capacitor 43 and the second capacitor 42 each share one of twoelectrodes thereof and are electrically connected in parallel with eachother. It is therefore possible to increase a capacitance value of acapacitor connected between the reset drain node 46 and the sensitivityadjustment wire 32 (see FIG. 2). This makes it possible to moreeffectively reduce kTC noise.

Method for Producing Imaging Device 101

Next, an example of a method for producing the imaging device 101 isdescribed with reference to FIGS. 9 through 12. FIGS. 9 through 11 arediagrams that correspond to a cross-sectional view taken along the lineVI-VI of FIG. 5. FIG. 12 is a diagram that corresponds to across-sectional view taken along the line VIII-VIII of FIG. 7.

First, the semiconductor substrate 2 is prepared. In this example, aP-type silicon substrate is used. Next, a mask of a resist that has beenpatterned is formed on the semiconductor substrate 2 by usinglithography. Then, the well 2 w is formed by ion implantation of anacceptor (e.g., boron (B)) under a predetermined implantation condition.

Next, a resist mask (resist pattern) for forming channel regions oftransistors to be disposed in the unit pixel cell 11 is formed by usinglithography. In this example, four transistors, i.e., the amplifiertransistor 34, the first reset transistor 36, the second resettransistor 38, and the address transistor 40 are formed in the unitpixel cell 11. The resist mask is formed so as to cover a part otherthan parts that will become the channel regions of the transistors.Then, the channel regions of the transistors are formed by ionimplantation of an acceptor or a donor under a predeterminedimplantation condition. In FIG. 9, the channel region 34 c of theamplifier transistor 34, the channel region 36 c of the first resettransistor 36, and the channel region 38 c of the second resettransistor 38 are illustrated. A desired threshold voltage can beachieved in each transistor by using ion implantation.

In this example, a donor (e.g., arsenic (As)) is ion-implanted into apredetermined region of the semiconductor substrate 2 by using a resistmask having an opening in the predetermined region of the semiconductorsubstrate 2. That is, in this example, the electrode region 42 c isformed by ion implantation into the predetermined region of thesemiconductor substrate 2.

Next, a film of a gate oxide is formed on a main surface of thesemiconductor substrate 2 by performing gate oxidation using, forexample, In Situ Steam Generation (ISSG). Typically, the gate oxide issilicon dioxide (SiO₂). Next, a material for forming a gate electrode isdeposited on the gate oxide by Chemical Vapor Deposition (CVD). In thisexample, a polysilicon film is formed on the gate oxide.

Next, a resist mask is formed on the polysilicon film by usinglithography, and gate insulating films (the gate insulating films 34 g,36 g, and 38 g) and gate electrodes (the gate electrodes 34 e, 36 e, and36 e) are formed from the film of the gate oxide and the polysiliconfilm by performing dry etching, respectively. At this point in time,patterning is performed so that a multilayer of the film of the gateoxide and the polysilicon film is also formed on a region of thesemiconductor substrate 2 that is different from regions in which thegate insulating films and the gate electrodes of the four transistorsare formed. This can form a structure in which the first dielectriclayer 42 g and the upper electrode 42 e are stacked on part of thesemiconductor substrate 2. That is, the second capacitor 42, which is anMIS capacitor, can be formed in parallel with formation of the gateinsulating films and the gate electrodes of the four transistors (seeFIG. 9). According to the embodiment of the present disclosure, it isthus possible to form the second capacitor 42 in the unit pixel cell 11without increasing the number of steps.

Next, a resist mask that covers parts that will become source regionsand drain regions of the transistors is formed by using lithography.Then, the element separation region 2 s is formed by ion implantation ofan acceptor under a predetermined implantation condition. In the ionimplantation, the acceptor for forming the element separation region 2 sis not directly implanted into regions directly below the gateelectrodes (the gate electrodes 34 e, 36 e, and 36 e) of the transistorsand the upper electrode 42 e of the second capacitor 42. In thisexample, the element separation region 2 s is formed so as to surroundthe pair of first reset transistor 36 and second reset transistor 38,the pair of amplifier transistor 34 and address transistor 40, and thesecond capacitor 42 (see FIG. 5). The resist mask is removed afterformation of the element separation region 2 s.

Next, a resist mask having an opening in the parts that will become thesource regions and the drain regions of the transistors is formed byusing lithography. Then, the source/drain diffusion layers 2 d areformed by ion implantation of a donor under a predetermined implantationcondition (see FIG. 9). The ion implantation of the donor may beperformed by applying so-called gate injection to the gate electrodes ofthe transistors and/or the upper electrode 42 e of the second capacitor42 in the unit pixel cell 11.

Next, an insulating film that covers the polysilicon layer thatconstitutes the gate electrodes of the transistors and the upperelectrode 42 e of the second capacitor 42 and the semiconductorsubstrate 2 are formed by using CVD. Typically, the insulating film thusformed is a silicon dioxide film.

Next, a resist mask for formation of contact holes is formed on theinsulating film that covers the polysilicon layer and the semiconductorsubstrate 2 by using lithography. Then, the insulating layer 48 isformed by forming contact holes chg and contact holes chs above the gateelectrodes of the transistors and the source/drain diffusion layers 2 dby dry etching, respectively (see FIG. 10). Note that a contact hole isalso formed above the upper electrode 42 e of the second capacitor 42.The contact hole above the upper electrode 42 e is provided so as toelectrically connect the upper electrode 42 e to the reset drain node 46(see FIG. 5).

Next, a region having a relatively high impurity concentration is formedin the gate electrodes of the transistors and the source/drain diffusionlayers 2 d by ion implantation of a donor via the contact holes chs andthe contact holes chg formed in the insulating layer 48 (not illustratedin FIG. 10). Then, the region having a relatively high impurityconcentration is caused to have low resistance by activating theimplanted impurity by annealing.

Next, a film of polysilicon containing a high concentration of N-typeimpurity is deposited on the insulating layer 48 by a method such asCVD. The film of polysilicon is also deposited in the inside of thecontact holes (the contact holes chs and chg) provided in the insulatinglayer 48.

Next, a resist mask is formed by using lithography. After formation ofthe resist mask, a polysilicon layer is formed on the insulating layer48 by dry etching, and polysilicon plugs (the polysilicon plugs sp1 andsp2) that connect the polysilicon layer on the insulating layer 48 andthe source/drain diffusion layers 2 d and a polysilicon plug (thepolysilicon plug sp3) that connects the polysilicon layer on theinsulating layer 48 and the gate electrodes (the gate electrodes 34 e,36 e, and 38 e) of the transistors are formed. Note that an advantage ofsuppressing a dark current can be obtained since the influence of acrystal defect caused by a metal/semiconductor interface in the case ofuse of metal plugs can be avoided by using the plugs made of polysiliconas contacts with the source/drain diffusion layers 2 d that constitutepart of the electric charge accumulation node 44 (see, for example, FIG.5). Then, a polysilicon layer s1 serving as a conductive layer is formedby lowering the resistance of the surface of the polysilicon layer onthe insulating layer 48 by silicidation (see FIG. 11).

At this point in time, a conductive part (a polysilicon wire) thatconnects the source or the drain of the first reset transistor 36 andthe gate electrode 34 e of the amplifier transistor 34 is formed bypatterning of polysilicon. The patterning is performed so that at leastpart of this conductive part overlaps the upper electrode 42 e of thesecond capacitor 42 via the insulating layer 48. This makes it possibleto form the first capacitor 41 having a structure in which an insulatingfilm is sandwiched between two polysilicon layers. As is clear from theabove description, the upper electrode 41 w of the first capacitor 41can be part of the polysilicon layer s1. Furthermore, the seconddielectric layer 41 g of the first capacitor 41 can be part of theinsulating layer 48. According to the First Embodiment of the presentdisclosure, it is possible to form the first capacitor 41 in the unitpixel cell 11 without increasing the number of steps.

As illustrated in FIG. 12, the pattering of polysilicon may be performedso that a conductive part different from the upper electrode 41 w isformed so as to overlap the upper electrode 42 e of the second capacitor42. By electrically connecting this conductive part and the electroderegion 42 c of the semiconductor substrate 2, it is possible to causethis conductive part to function as the upper electrode 43 e of thethird capacitor 43. The dielectric layer 43 g of the third capacitor 43can be part of the insulating layer 48 as with the second dielectriclayer 41 g of the first capacitor 41. According to the embodiment of thepresent disclosure, it is thus possible to form, in the unit pixel cell11, the third capacitor 43 that exhibits a flat CV characteristic in arelatively wide voltage range without adding a special step.Furthermore, it is possible to increase the composite capacitance of thesecond capacitor 42 and the third capacitor 43 while suppressing anincrease in pixel size.

After formation of the polysilicon layer s1, the interlayer insulatinglayer 4 s, the contact plug cpa for connection between the wiring layer6 s and the upper electrode 41 w, the wiring layer 6 s, the interlayerinsulating layer 4 a, the via va, the wiring layer 6 a, the interlayerinsulating layer 4 b, the via vb, the wiring layer 6 b, the interlayerinsulating layer 4 c, and the via vc are sequentially formed. Note thatthe number of interlayer insulating layers and the like can be anynumber and need not be four layers. The unit pixel cell 11 illustratedin FIG. 6 or FIG. 8 is obtained by forming the photoelectric conversionunit 15 on the interlayer insulating layer 4 c.

As described above, the imaging device 101 can be produced by using aknown semiconductor production technique. A camera system can berealized by the imaging device 101 thus obtained and an optical systemthat forms an image on the light-receiving surface 15 h of thephotoelectric conversion film 15 b. A protective film, a color filter, alens (microlens), and the like may be further formed on the firstelectrode 15 a of the photoelectric conversion unit 15.

Modification of First Embodiment

A modification of the imaging device according to the First Embodimentof the present disclosure is described with reference to FIG. 13.

FIG. 13 schematically illustrates an exemplary circuit configuration ofa unit pixel cell 12 in the imaging device according to the FirstEmbodiment. The configuration illustrated in FIG. 13 is different fromthe configuration illustrated in FIG. 2 in that one of a source and adrain of a first reset transistor 36 which one is not connected to asecond electrode 15 c (electric charge accumulation node 44) isconnected not to a reset drain node 46 but to a feedback wire 25.

In the configuration illustrated in FIG. 13, switching between the firstmode and the second mode described with reference to FIGS. 3 and 4cannot be performed. However, since the one of the source and drain ofthe first reset transistor 36 which one is not connected to the electriccharge accumulation node 44 is directly connected to the feedback wire25, an advantage of improving flexibility of design of an impurityprofile for securing driving force of the first reset transistor 36 isobtained. Note that operation timings of each transistor in theconfiguration illustrated in FIG. 13 are similar to those in the firstmode described above.

In the configuration described with reference to FIG. 2, one of theelectrodes of the first capacitor 41 is directly connected to one of thesource and drain of the first reset transistor 36, and the other of theelectrodes of the first capacitor 41 is directly connected to the otherof the source and the drain of the first reset transistor 36. However,as illustrated in FIG. 13, the first reset transistor 36 need notnecessarily connected to the first capacitor 41 in parallel with eachother.

Layout and a device structure of elements in the unit pixel cell 12illustrated in FIG. 13 are almost similar to the layout described withreference to FIGS. 5 and 7 and the device structure described withreference to FIGS. 6 and 8, and therefore description thereof isomitted. A method for producing the unit pixel cell 12 illustrated inFIG. 13 can be similar to that described with reference to FIGS. 9through 12.

Second Embodiment

FIG. 14 schematically illustrates an exemplary circuit configuration ofa unit pixel cell 13 in an imaging device according to the SecondEmbodiment. As illustrated in FIG. 14, the imaging device according tothe Second Embodiment is different from the imaging device 101 accordingto the First Embodiment in that a switching circuit 50 is provided ineach column of unit pixel cells 13 instead of the inverting amplifier 24(see FIGS. 2 and 13). Accordingly, a feedback wire 25 does not connect aplurality of unit pixel cells 13 that constitute each column of theimaging device according to the Second Embodiment.

In each of the unit pixel cells 13, the feedback wire 25 is connected toone of a source and a drain of a second reset transistor 38 which one isnot connected to a reset drain node 46. An address transistor 40 isprovided between one of a source and a drain of an amplifier transistor34 and the feedback wire 25. One of a source and a drain of the addresstransistor 40 which one is connected to the feedback wire 25 isconnected to a vertical signal wire 18. Differences from the imagingdevice 101 according to the First Embodiment are mainly described below.

The switching circuit 50 includes switch elements 51 and 51′ that areconnected to a power source wire 22 in parallel with each other andswitch elements 52′ and 52 that are connected to a vertical signal wire18 in parallel with each other. The switch elements 51 and 51′ areconnected to a power source voltage (AVDD) and a reference voltage(AVSS), respectively. The switch elements 52′ and 52 are connected tothe power source voltage (AVDD) and the reference voltage (AVSS) viaconstant current sources 27′ and 27, respectively.

At the time of readout of a signal in the unit pixel cells 13, one ofthe unit pixel cells 13 of each column is selected by applying a voltageto the gate of the address transistor 40 via an address signal wire 30.Furthermore, by turning the switch element 51 and the switch element 52of the switching circuit 50 ON, an electric current flows from theconstant current source 27, for example, in a direction from theamplifier transistor 34 toward the address transistor 40, and an voltageof the electric charge accumulation node 44 amplified by the amplifiertransistor 34 is detected.

Meanwhile, in a reset operation, by turning the switch element 51′ andthe switch element 52′ of the switching circuit 50 ON, an electriccurrent flows in the address transistor 40 and the amplifier transistor34 in a direction opposite to that at a time of a signal readout. Thisforms a feedback circuit FC including the amplifier transistor 34, theaddress transistor 40, the feedback wire 25, the second reset transistor38, and a first reset transistor 36. In this case, the addresstransistor 40 and the amplifier transistor 34 are cascode-connected, andtherefore large gain can be obtained. This allows the feedback circuitFC to perform noise cancelling with large gain.

The imaging device according to the present embodiment can be operatedin a first mode in which imaging with relatively high sensitivity ispossible and a second mode in which imaging with relatively lowsensitivity is possible by controlling the first reset transistor 36 andthe second reset transistor 38, as in the imaging device according tothe First Embodiment. Furthermore, according to the imaging device ofthe present embodiment, it is possible to reduce kTC noise as in theFirst Embodiment.

The imaging device of the present embodiment does not include theinverting amplifier 24, and the address transistor 40 and the amplifiertransistor 34 serve as amplifiers of a signal detection circuit SC and afeedback circuit FC. It is therefore possible to reduce the area ofcircuits of the imaging device. Furthermore, it is possible to reducepower consumption of the imaging device. Furthermore, since large gaincan be obtained by cascode connection, kTC noise can be reduced even ina case where the capacitance of the first capacitor 41 and thecapacitance of the second capacitor 42 are small.

Layout of elements in the unit pixel cell 13 illustrated in FIG. 14 canbe almost similar to that in the unit pixel cell 11 described withreference to FIGS. 5 and 7. A device structure of the elements in theunit pixel cell 13 can be almost similar to that in the unit pixel cell11 described with reference to FIGS. 6 and 8. Therefore, description ofthe layout and device structure of the elements in the unit pixel cell13 is omitted. A method for producing the unit pixel cell 13 can besimilar to the method for producing the unit pixel cell 11 describedwith reference to FIGS. 9 through 12. Therefore, description of themethod for producing the unit pixel cell 13 is omitted.

Third Embodiment

FIG. 15 illustrates an exemplary circuit configuration of a unit pixelcell 14 in an imaging device according to the Third Embodiment. As inthe Second Embodiment, the imaging device according to the ThirdEmbodiment is different from the imaging device 101 according to theFirst Embodiment in that a switching circuit 50′ is provided in eachcolumn of unit pixel cells 14 instead of the inverting amplifier 24 (seeFIGS. 2 and 13). Furthermore, a feedback wire 25 does not connect aplurality of unit pixel cells 14 of each column.

In each of the unit pixel cells 14, the feedback wire 25 is connected toone of a source and a drain of a second reset transistor 38 which one isnot connected to a reset drain node 46. One of a source and a drain ofan address transistor 40 is connected to a constant current source 27via a vertical signal wire 18. The other of the source and the drain ofthe address transistor 40 is connected to the feedback wire 25 and oneof a source and a drain of an amplifier transistor 34. The other of thesource and the drain of the amplifier transistor 34 is connected to theswitching circuit 50′ via a power source wire 22.

The switching circuit 50′ includes switch elements 51 and 51′ that areconnected in parallel with each other, and the switch elements 51 and51′ are connected to a power source voltage (AVDD) and a referencevoltage (AVSS), respectively.

The imaging device according to the present embodiment can also beoperated in a first mode in which imaging with relatively highsensitivity is possible and a second mode in which imaging withrelatively low sensitivity is possible, as in the imaging device 101according to the First Embodiment.

FIG. 16 is a timing diagram for explaining an example of operation ofthe transistors in the first mode. In FIG. 16, ADD, RST1, and RST2schematically illustrate examples of changes of a gate voltage of theaddress transistor 40, a gate voltage of the first reset transistor 36,and a gate voltage of the second reset transistor 38, respectively. Inthe example illustrated in FIG. 16, at a time t0, the address transistor40, the first reset transistor 36, and the second reset transistor 38are OFF. For simplification, description of operation of an electronicshutter is omitted.

First, the address transistor 40 is turned ON (a time t1) by controllingthe voltage of an address signal wire 30. At this point in time, asignal electric charge accumulated in an electric charge accumulationnode 44 is read out.

Next, the address transistor 40 is turned OFF (a time t1′). Then, thefirst reset transistor 36 and the second reset transistor 38 are turnedON (a time t2) by controlling the voltage of a reset signal wire 26 andthe voltage of a feedback control wire 28. Furthermore, a referencevoltage (AVSS) is applied to one of the source and drain of theamplifier transistor 34 by controlling the switching circuit 50′. Atthis point in time, the address transistor 40 maintains an OFF state.This causes the electric charge accumulation node 44 and the feedbackwire 25 to be connected to each other via the first reset transistor 36and the second reset transistor 38 in the unit pixel cell 14, therebyforming a feedback circuit FC that negatively feeds back output of asignal detection circuit SC including the amplifier transistor 34.

At a time t3, the first reset transistor 36 is turned OFF (the time t3).When the first reset transistor 36 is turned OFF at the time t3, kTCnoise occurs. Accordingly, the kTC noise is added to the voltage of theelectric charge accumulation node 44 after reset. The kTC noise thatoccurs when the first reset transistor 36 is turned OFF is cancelleddown to 1/(1+A) where A is gain of the feedback circuit FC. Noise can besuppressed fast by setting the voltage of the feedback control wire 28so that the operation band of the second reset transistor 38 becomes afirst band which is a broad band. It should be noted that a frequencyband of a signal passing between a source and a drain of a transistor isreferred to as an operation band of the transistor.

Then, at a time t3′, the voltage of the feedback control wire 28 is setto an intermediate voltage between a high level and a low level. Thiscauses the operation band of the second reset transistor 38 to become asecond band narrower than the first band.

At a time t4, the second reset transistor 38 is turned OFF, and therebykTC noise occurs. Accordingly, the kTC noise is further added to thevoltage of the electric charge accumulation node 44 after reset. The kTCnoise that occurs is suppressed by the feedback circuit FC and iscancelled down to 1/(1+A)^(1/2) in a state where the second band islower than the operation band of the amplifier transistor 34.

Next, at a time t5, the address transistor 40 is turned ON. Furthermore,one of the source and drain of the amplifier transistor 34 is connectedto the power source voltage (AVDD) by controlling the switching circuit50′. This causes an electric current to flow from the constant currentsource 27, for example, in a direction from the amplifier transistor 34toward the address transistor 40, and the voltage of the electric chargeaccumulation node 44 amplified by the amplifier transistor 34 isdetected. The detected voltage is supplied to the constant currentsource 27 (the column signal processing circuit 20, see FIG. 1) via thevertical signal wire 18. In FIG. 16, a period of exposure isschematically indicated by the arrow Exp. During the period of exposure,a reset voltage in which the kTC noise has been cancelled is read out ata predetermined timing (a time t5′). Note that since a period of timetaken to read out the reset voltage is short, readout of the resetvoltage may be performed while the ON state of the address transistor 40continues.

A signal from which fixed noise has been removed is obtained bycalculating a difference between a signal read out during a periodbetween the time t1 and the time t1′ and a signal read out at the timet5′. In this way, a signal from which the kTC noise and the fixed noisehave been removed is obtained.

FIG. 17 is a timing diagram for explaining an example of operation ofthe transistors in the second mode in which imaging with relatively lowsensitivity is possible. As described in the First Embodiment, thetransistors are driven in the same manner as in the first mode exceptfor that the first reset transistor 36 is always ON, and kTC noise issuppressed by a feedback circuit in each unit pixel cell 14.

In the imaging device according to the present embodiment, the firstreset transistor 36 has both a function of a reset transistor thatresets the electric charge accumulation node 44 and a function of aswitch that switches between the first mode and the second mode, as inthe First Embodiment. Furthermore, the second capacitor 42 has both afunction of reducing kTC noise in the first mode and a function ofincreasing the capacitance value of the entire electric chargeaccumulation region. According to the present embodiment, it is possibleto expand a dynamic range with a simple configuration while suppressingan increase in the number of elements in a pixel. This is usefulespecially for miniaturization of pixels.

Modification of Third Embodiment

FIG. 18 schematically illustrates an exemplary circuit configuration ofa unit pixel cell 14 a in an imaging device according to a modificationof the Third Embodiment. As illustrated in FIG. 18, also in thisexample, the inverting amplifier 24 (see FIGS. 2 and 13) is omitted, anda feedback wire 25 connects one of a source and a drain of a secondreset transistor 38 which one is not connected to a reset drain node 46and one of a source and a drain of an amplifier transistor 34. In theconfiguration illustrated in FIG. 18, output of an amplifier transistor34 is used as a reference voltage at reset.

In the configuration illustrated in FIG. 18, a voltage switching circuit54 is connected to a power source wire 22. The voltage switching circuit54 has a pair of first switch 53 a and second switch 53 b. The voltageswitching circuit 54 switches whether to supply a first voltage Va1 tothe power source wire 22 or to supply a second voltage Va2 to the powersource wire 22. The first voltage Va1 is, for example, 0 V (grounding),and the second voltage Va2 is, for example, a power source voltage. Thevoltage switching circuit 54 may be provided for each pixel or may beshared by a plurality of pixels.

According to such a circuit configuration, kTC noise can be reduced asin the First Embodiment.

FIG. 19 schematically illustrates an exemplary circuit configuration ofa unit pixel cell 14 b in an imaging device according to anothermodification of the Third Embodiment. In the configuration illustratedin FIG. 19, one of a source and a drain of a first reset transistor 36which one is not connected to an electric charge accumulation node 44 isconnected not to a reset drain node 46 but to a feedback wire 25, as inthe circuit configuration described with reference to FIG. 13. Accordingto such a circuit configuration, kTC noise can be reduced as in theFirst Embodiment.

Layout of the elements in the unit pixel cell 14 illustrated in FIG. 15,the unit pixel cell 14 a illustrated in FIG. 18, and the unit pixel cell14 b illustrated in FIG. 19 can be almost similar to that in the unitpixel cell 11 described with reference to FIGS. 5 and 7. Furthermore, adevice structure of the elements in the unit pixel cells 14, 14 a, and14 b can be almost similar to that in the unit pixel cell 11 describedwith reference to FIGS. 6 and 8. Therefore, description of the layoutand the device structure of the elements in the unit pixel cells 14, 14a, and 14 b is omitted. A method for producing the unit pixel cell 14illustrated in FIG. 15, the unit pixel cell 14 a illustrated in FIG. 18,and the unit pixel cell 14 b illustrated in FIG. 19 can be similar tothe method for producing the unit pixel cell 11 described with referenceto FIGS. 9 through 12. Therefore, description of the method forproducing the unit pixel cells 14, 14 a, and 14 b is omitted.

Fourth Embodiment

In the embodiments above, the electrode region 42 c is provided in thesemiconductor substrate 2, and the second capacitor 42 is a so-calledMIS capacitor. However, the configuration of a high-capacitancecapacitor in the signal detection circuit SC is not limited to the aboveexample. As described below, a capacitor that has a structure in which adielectric is sandwiched between two electrodes made of a metal or ametal compound may be disposed in an interlayer insulating layerprovided between the semiconductor substrate 2 and the photoelectricconversion unit 15. Hereinafter, the structure in which a dielectric issandwiched between two electrodes made of a metal or a metal compound issometimes referred to as a “MIM (Metal-Insulator-Metal) structure”. Byforming, as a capacitor having a so-called MIM structure, In a casewhere a capacitor disposed in an interlayer insulating layer between thesemiconductor substrate 2 and the photoelectric conversion unit 15 has aso-called MIM structure, it is easier to obtain a larger capacitancevalue. The device structure described below is applicable to any of theFirst through Third Embodiments described above.

FIG. 20 schematically illustrates another example of a device structureof a unit pixel cell. Layout of elements on a semiconductor substrate 2in a unit pixel cell 60A illustrated in FIG. 20 can be similar to thatin the unit pixel cell 11 illustrated in FIG. 5. FIG. 20 is a diagramcorresponding to a cross-sectional view taken along the line XX-XX ofFIG. 5.

The unit pixel cell 60A illustrated in FIG. 20 has a capacitor 62disposed between a semiconductor substrate 2 and a second electrode 15c. The capacitor 62 includes an upper electrode 62 u, a lower electrode62 b, and a dielectric layer 62 d disposed between the upper electrode62 u and the lower electrode 62 b. As illustrated in FIG. 20, the lowerelectrode 62 b is disposed farther from the second electrode 15 c thanthe upper electrode 62 u is (i.e., nearer to the semiconductor substrate2 than the upper electrode 62 u is). Note that terms “upper” and “lower”used herein are used to show relative positions of members and do notlimit the posture of the imaging device of the present disclosure.

In this example, the lower electrode 62 b is formed on an interlayerinsulating layer 4 c, and the capacitor 62 is covered with an interlayerinsulating layer 4 d provided between the interlayer insulating layer 4c and a photoelectric conversion film 15 b. By thus disposing the lowerelectrode 62 b and the upper electrode 62 u between the photoelectricconversion unit 15 and a gate electrode 34 e of an amplifier transistor34, it is possible to suppress interference between (i) a wiring layerincluding the gate electrode 34 e of the amplifier transistor 34 and(ii) the lower electrode 62 b and the upper electrode 62 u. It istherefore possible to form the capacitor 62 having a relatively largeelectrode area.

The lower electrode 62 b is typically a metal electrode or a metalnitride electrode. Examples of a material of which the lower electrode62 b is made is Ti, TiN, Ta, TaN, Mo, Ru, and Pt. The lower electrode 62b may be part of the wiring layer provided in the interlayer insulatinglayer 4 d.

The dielectric layer 62 d is stacked on the lower electrode 62 b. Inthis example, the dielectric layer 62 d covers a surface of the lowerelectrode 62 b that faces the second electrode 15 c and side surfaces ofthe lower electrode 62 b.

The dielectric layer 62 d may be made of a material (e.g., a metal oxideor a metal nitride) different from a material (typically silicondioxide) of which the interlayer insulating layer 4 d is made. In a casewhere the capacitor 62 is disposed in the interlayer insulating layerprovided between the semiconductor substrate 2 and the photoelectricconversion unit 15, it is relatively easy to use a material having arelatively high permittivity as a material of which the dielectric layer62 d is made. It is therefore easy to achieve a relatively largecapacitance value. An example of the material of which the dielectriclayer 62 d is made is an oxide or a nitride containing one or moreselected from a group consisting of Zr, Al, La, Ba, Ta, Ti, Bi, Sr, Si,Y, and Hf. The material of which the dielectric layer 62 d is made maybe a secondary compound, a tertiary compound, or a quaternary compound.A material having a relatively high permittivity such as HfO₂, Al₂O₃,ZrO₂, TiO₂, or SrTiO₃ can be used as the material of which thedielectric layer 62 d is made. The dielectric layer 62 d may include twoor more layers made of respective different materials.

The upper electrode 62 u is stacked on the dielectric layer 62 d. Inthis example, the upper electrode 62 u covers a surface of thedielectric layer 62 d that faces the second electrode 15 c and sidesurfaces of the dielectric layer 62 d. The upper electrode 62 u istypically a metal electrode or a metal nitride electrode. That is, thecapacitor 62 has a so-called MIM structure. A material similar to thematerial of which the lower electrode 62 b is made can be used as amaterial of which the upper electrode 62 u is made. The upper electrode62 u may be part of the wiring layer provided in the interlayerinsulating layer 4 d.

A protective layer made of a metal such as Cu or Al, polysilicon, or thelike may be disposed between the upper electrode 62 u and the dielectriclayer 62 d. By disposing the protective layer between the upperelectrode 62 u and the dielectric layer 62 d, it is possible to suppressdamage of the dielectric layer 62 d in a production process, and it istherefore possible to suppress occurrence of a leak current between theupper electrode 62 u and the lower electrode 62 b.

The upper electrode 62 u has an opening AP. A via vd, a connection part66 u, and a connection part 66 b are disposed inside the opening AP. Theconnection part 66 u and the connection part 66 b are in the same layersas the upper electrode 62 u and the lower electrode 62 b, respectively.As illustrated in FIG. 20, the second electrode 15 c of thephotoelectric conversion unit 15 and a via vc having connection with thegate electrode 34 e of the amplifier transistor 34 are connected to eachother via the via vd, the connection part 66 u, and the connection part66 b. The via vd can be made of a metal such as copper. The via vd, theconnection part 66 u, and the connection part 66 b constitute part of anelectric charge accumulation region in the unit pixel cell 60A.

In the configuration illustrated in FIG. 20, a part of the lowerelectrode 62 b on the right side of the via vd is connected to the upperelectrode 42 e of the second capacitor 42 via the via vc1, a wiringlayer 6 b, a via vb1, a wiring layer 6 a, a via va1, a wiring layer 6 s,and a contact plug cpb provided in an interlayer insulating layer 4 s.That is, the lower electrode 62 b has connection with a reset drain node46 that is not illustrated in FIG. 20. In this example, the lowerelectrode 62 b is a single electrode provided for each unit pixel cell60A (see FIG. 21 that will be described later), and two parts of thelower electrode 62 b that are separated from each other on the left andright of the opening AP in FIG. 20 has equal voltages.

In this example, the upper electrode 62 u covers a connection part 64 bformed in the same layer as the lower electrode 62 b. This connectionpart 64 b is connected to a wire 6 z, which is part of the wiring layer6 s, via a via vc3, the wiring layer 6 b, a via vb3, the wiring layer 6a, and a via va3. The wire 6 z has connection with a sensitivityadjustment wire 32 that is not illustrated in FIG. 20. That is, thecapacitor 62 is electrically connected in parallel with the secondcapacitor 42 and functions in a similar manner to the second capacitor42. That is, in this example, the unit pixel cell 60A has a capacitorcircuit in which (i) a first capacitor 41 and (ii) the capacitor 62 andthe second capacitor 42 are serially connected.

In a case where the capacitor 62 is formed in a unit pixel cell, thesecond capacitor 42 can be omitted. In a case where the second capacitor42 is omitted, it is unnecessary to secure a region for the electroderegion 42 c in the semiconductor substrate 2. This improves flexibilityof design of element layout in the semiconductor substrate 2. Forexample, a pixel size can be reduced by omission of the electrode region42 c. Alternatively, the size of a transistor (e.g., the amplifiertransistor 34) on the semiconductor substrate 2 can be increased. Avariation in characteristics of the transistors can be reduced due tothe increase in the size of the transistor, and therefore a variation insensitivity among unit pixel cells can be reduced. Furthermore, drivingperformance (i.e., transconductance g_(m)) is improved due to theincrease in the size of the transistor, and therefore noise can befurther reduced.

In this example, the upper electrode 62 u is electrically connected tothe via vc3 on a surface thereof opposite to a surface thereof thatfaces the second electrode 15 c of the photoelectric conversion unit 15.By thus providing a contact for electrical connection between the upperelectrode 62 u and the sensitivity adjustment wire 32 on the surfacecloser to the semiconductor substrate 2, it is possible to avoidcomplicated wiring. Furthermore, since a distance between the upperelectrode 62 u and the second electrode 15 c of the photoelectricconversion unit 15 can be reduced, and therefore parasitic capacitanceof electric charge accumulation regions in adjacent pixels can bereduced.

During operation of the imaging device 101, a predetermined voltage isapplied to the upper electrode 62 u via the sensitivity adjustment wire32. In this example, as with the lower electrode 62 b, the upperelectrode 62 u is a single electrode provided for each unit pixel cell60A (see FIG. 21 that will be described later), and two parts of theupper electrode 62 u that are separated from each other on the left andright of the opening AP in FIG. 20 have equal voltages.

FIG. 21 illustrates an example of the way in which the upper electrode62 u, the dielectric layer 62 d, and the lower electrode 62 b aredisposed when the unit pixel cell 60A is viewed from the normal to thesemiconductor substrate 2. FIG. 21 illustrates a XX-XX section linesimilar to that of FIG. 5. As illustrated in FIG. 21, the shape of theupper electrode 62 u need not be identical to that of the lowerelectrode 62 b when viewed from the normal to the semiconductorsubstrate 2. It is only necessary that the upper electrode 62 u includepart that faces at least part of the lower electrode 62 b when viewedfrom the normal to the semiconductor substrate 2.

In this example, the lower electrode 62 b and the upper electrode 62 uoccupy a large region in the unit pixel cell 60A. Therefore, by formingat least one of the lower electrode 62 b and the upper electrode 62 u asa light-shielding electrode, the at least one of the lower electrode 62b and the upper electrode 62 u can function as a light-shielding layer.By causing, for example, the upper electrode 62 u to function as alight-shielding layer, light that has passed a gap between the secondelectrodes 15 c can be shielded by the upper electrode 62 u. This makesit possible to prevent light that has passed the gap between the secondelectrodes 15 c from entering channel regions of the transistors (e.g.,the amplifier transistor 34) on the semiconductor substrate 2. Forexample, a sufficient light-shielding effect can be achieved by forminga TaN electrode having a thickness of 100 nm as the upper electrode 62u.

According to the Fourth Embodiment, it is possible to suppress incidentstray light on the channel regions of the transistors on thesemiconductor substrate 2, thereby suppressing a shift ofcharacteristics of the transistors (e.g., a fluctuation of a thresholdvoltage). By suppressing incident stray light on the channel regions ofthe transistors on the semiconductor substrate 2, the characteristics ofthe transistors of each pixel are stabilized, and a variation ofoperation of the transistors among a plurality of pixels can be reduced.Suppressing incident stray light on the channel regions of thetransistors on the semiconductor substrate 2 contributes to animprovement in reliability of the imaging device.

In the configuration illustrated in FIG. 21, the upper electrodes 62 uare spatially separated, and therefore the upper electrodes 62 u areelectrically separated among the unit pixel cells 60A. That is, in thisexample, a slight gap exists between adjacent upper electrodes 62 u.However, each of the upper electrodes 62 u is configured so that apredetermined voltage is supplied thereto via the sensitivity adjustmentwire 32. Therefore, a distance between adjacent upper electrodes 62 ucan be made sufficiently smaller than a distance between adjacent secondelectrodes 15 c. This allows the upper electrodes 62 u to shield a largepart of the light that has passed the gap between the second electrodes15 c. In the circuit configuration illustrated in FIG. 1, a commonvoltage is applied to the upper electrodes 62 u in unit pixel cellsbelonging to an identical row. Therefore, a plurality of band-likeelectrodes that extend in a row direction over a plurality of columnsmay be used as the upper electrode 62 u. Needless to say, it is alsopossible that the upper electrodes 62 u in the unit pixel cells 60A bespatially separated from each other as illustrated in FIG. 21 and anindependent voltage be supplied to each upper electrode 62 u.

In this example, the opening AP of the upper electrode 62 u is formed ina lower part of the unit pixel cell 60A in FIG. 21. However, theposition of the opening AP is not limited to this example. For example,it is also possible that the opening AP be located at the center of theunit pixel cell 60A and the upper electrode 62 u be formed so as tosurround the connection part 66 u and the connection part 66 b. Aconfiguration in which the opening AP is located at the center of theunit pixel cell 60A and the shape of the upper electrode 62 u issymmetrical with respect to the connection part 66 u can reduceunbalance of capacitance in the unit pixel cell 60A and is thereforeadvantageous. The shape of the upper electrode 62 u viewed from thenormal to the semiconductor substrate 2 is not limited to the shapeillustrated in FIG. 21. For example, the upper electrode 62 u mayinclude a plurality of parts. The same applies to the dielectric layer62 d and the lower electrode 62 b.

As described above, in this example, the upper electrode 62 u hasconnection with the sensitivity adjustment wire 32, and therefore thevoltage of the upper electrode 62 u during operation of the imagingdevice 101 can be made constant by supplying a constant voltage to theupper electrode 62 u via the sensitivity adjustment wire 32. Therefore,by forming the upper electrode 62 u so as to surround the connectionpart 66 u and the connection part 66 b and by applying a constantvoltage to the upper electrode 62 u, the upper electrode 62 u can becaused to function as a shield electrode. In a case where the upperelectrode 62 u functions as a shield electrode, it is possible tosuppress noise contamination in the electric charge accumulation node44.

As described above, in the Fourth Embodiment, the capacitor 62 isdisposed between the upper electrode 41 w and the second electrode 15 cof the photoelectric conversion unit 15 as a capacitor connected betweenthe reset drain node 46 and the sensitivity adjustment wire 32. Asillustrated in FIG. 20, the capacitor 62 is disposed in an interlayerinsulating layer (e.g., the interlayer insulating layer 4 d) in eachunit pixel cell. It is therefore possible to form the capacitor 62having a so-called MIM structure. That is, a relatively largecapacitance value is easily obtained in the capacitor 62. Such aconfiguration also makes it possible to reduce kTC noise that occurs dueto reset while suppressing an increase in capacitance value of theentire electric charge accumulation region as in the First through ThirdEmbodiments. Furthermore, in a case where the capacitor 62 has a highcapacitance value, the capacitance value of the entire electric chargeaccumulation region can be made higher. This is advantageous for imagingunder high illuminance.

Method for Forming Capacitor 62

An outline of a method for producing an imaging device having the unitpixel cell 60A is described below. Production steps before formation ofthe via vc can be similar to those in the First Embodiment, andtherefore description thereof is omitted. As described with reference toFIG. 12, the upper electrode 43 e electrically connected to theelectrode region 42 c may be formed so as to overlap the upper electrode42 e of the second capacitor 42. In this example, the vias vc1 and vc3are also formed in parallel with formation of the via vc.

After formation of the vias vc, vc1, and vc3, the lower electrode 62 b,the connection part 66 b, and the connection part 64 b are formed on theinterlayer insulating layer 4 c. In this example, TaN is used as amaterial of which the lower electrode 62 b, the connection part 66 b,and the connection part 64 b are made. Photolithography, which isintroduced in a general semiconductor process, is applicable toformation of the lower electrode 62 b, the connection part 66 b, and theconnection part 64 b on the interlayer insulating layer 4 c. Then, adielectric film is formed by depositing the material of the dielectriclayer 62 d, and the dielectric film is patterned.

For example, Atomic Layer Deposition (ALD) is applicable to formation ofthe dielectric film. ALD allows different types of atoms (several atomsfor each type) to be stacked. In this example, a film of an Hf oxide isformed as the dielectric film. In formation of the film of the Hf oxide,tetrakis ethylmethylamido hafnium is used as a precursor, and plasmadischarge is performed after introduction of the precursor. Oxidation ofHf is promoted by performing plasma discharge in an oxygen atmosphere.By repeating the above steps, layers of HfO₂ are stacked one by one. Forexample, a film having a thickness of 22 nm is formed by repeatingintroduction of a gaseous precursor and plasma discharge 250 times.

Photolithography, which is introduced in a general semiconductorprocess, is applicable to patterning of the dielectric film. Thedielectric layer 62 d is formed by patterning of the dielectric film.The dielectric layer 62 d may be a continuous single film or may includea plurality of parts disposed on respective different parts of the lowerelectrode 62 b.

The upper electrode 62 u and the connection part 66 u are formed in amanner similar to the lower electrode 62 b after formation of thedielectric layer 62 d. Then, the interlayer insulating layer 4 d and thevia vd are formed, and the photoelectric conversion unit 15 is formed onthe interlayer insulating layer 4 d. In this way, the device structureillustrated in FIG. 20 is obtained.

The second electrode 15 c of the photoelectric conversion unit 15 may beformed by using a metal nitride such as TiN, TaN, or WN. The metalnitride is excellent in denseness and has a property such that movementand/or contamination with an impurity element are hard to occur evenunder high temperature. Therefore, by forming the upper electrode 62 ulocated above the dielectric layer 62 d by using a metal nitride (TaN inthis example) and by forming the second electrode 15 c by using a metalnitride, it is possible to suppress contamination of the dielectriclayer 62 d with a carrier caused by impurities. By suppressingcontamination of the dielectric layer 62 d with impurities, it ispossible to reduce a leak current between the upper electrode 62 u andthe lower electrode 62 b in the capacitor 62.

Furthermore, since migration is hard to occur during sputtering of ametal nitride, it is easy to form a flat surface. In a case where thesecond electrode 15 c of the photoelectric conversion unit 15 is formedby using a metal nitride, joining of a flat interface can be achieved.By suppressing concavities and convexities on the surface of the secondelectrode 15 c, smooth electric charge transport between the secondelectrode 15 c and the photoelectric conversion film 15 b can beachieved. Furthermore, it is possible to suppress occurrence of aninterface state caused by an interface defect, thereby suppressing adark current. Formation of both of the upper electrode 62 u of thecapacitor 62 and the second electrode 15 c of the photoelectricconversion unit 15 by using a metal nitride is useful from theperspective of a reduction of a leak current and a dark current.Furthermore, formation of the lower electrode 62 b of the capacitor 62by using a metal nitride can further improve flatness of the upperelectrode 62 u and is therefore useful. Moreover, this is useful sinceoxidation of the dielectric layer 62 d can be suppressed.

First Modification of Fourth Embodiment

FIG. 22 schematically illustrates still another example of a devicestructure of a unit pixel cell. FIG. 23 illustrates an example of theway in which an upper electrode 62 u, a dielectric layer 62 d, and alower electrode 62 b are disposed when a unit pixel cell 60B illustratedin FIG. 22 is viewed from the normal to a semiconductor substrate 2.FIG. 22 is a diagram corresponding to a cross-sectional view taken alongthe line XXII-XXII of FIG. 23. A main difference between the unit pixelcell 60B illustrated in FIGS. 22 and 23 and the unit pixel cell 60Adescribed with reference to FIGS. 20 and 21 is that the upper electrode62 u and the lower electrode 62 b are connected to a reset drain node 46and a sensitivity adjustment wire 32, respectively.

As illustrated in FIG. 22, in this example, the upper electrode 62 u isconnected to a wire 6 w which is part of a wiring layer 6 s via aconnection part 64 b, a via vc2, a wiring layer 6 b, a via vb2, a wiringlayer 6 a, and a via va2. This wire 6 w has connection with the resetdrain node 46. That is, the upper electrode 62 u has connection with thereset drain node 46. Meanwhile, the lower electrode 62 b is connected toa wire 6 z via a via vc3, the wiring layer 6 b, a via vb3, the wiringlayer 6 a, and a via va3. As described above, this wire 6 z hasconnection with the sensitivity adjustment wire 32 (not illustrated inFIG. 22). That is, the lower electrode 62 b has connection with thesensitivity adjustment wire 32. That is, also in this example, acapacitor 62 is connected between the reset drain node 46 and thesensitivity adjustment wire 32. Accordingly, the capacitor 62 functionsas the second capacitor 42 described above. Furthermore, in thisexample, since the lower electrode 62 b has connection with thesensitivity adjustment wire 32, the voltage of the lower electrode 62 bcan be controlled via the sensitivity adjustment wire 32. By controllingthe voltage of the lower electrode 62 b, it is possible to control thevoltage of the electric charge accumulation node 44, thereby adjustingsensitivity of the imaging device. Furthermore, in a case where aconstant voltage is supplied to the lower electrode 62 b via thesensitivity adjustment wire 32 during operation of the imaging device,the lower electrode 62 b can be caused to function as a shieldelectrode.

As illustrated in FIG. 22, in this example, an upper electrode 41 x thatconnects a source or a drain (a source/drain diffusion layer 2 d) of afirst reset transistor 36 and a gate electrode 34 e of an amplifiertransistor 34 does not extend to a region above an upper electrode 42 e.In other words, the upper electrode 41 x does not overlap the upperelectrode 42 e when viewed from the normal to the semiconductorsubstrate 2. Accordingly, the unit pixel cell 60B does not include, inthe interlayer insulating layer 4 s, a first capacitor 41 made up of twopolysilicon layers that face each other and an insulating filmsandwiched between the two polysilicon layers.

Turning attention to a photoelectric conversion unit 15 and thecapacitor 62, the second electrode 15 c of the photoelectric conversionunit 15 and the upper electrode 62 u of the capacitor 62 face each othervia an interlayer insulating layer 4 d. As described above, in thisexample, the upper electrode 62 u has connection with the reset drainnode 46. That is, a capacitor 41B formed by the second electrode 15 c,the upper electrode 62 u, and the interlayer insulating layer 4 d can beregarded as a capacitor connected between the electric chargeaccumulation node 44 and the reset drain node 46. For example, as isclear from the circuit configuration illustrated in FIG. 2, thiscapacitor 41B functions in a similar manner to the first capacitor 41described above. That is, in this example, (i) the capacitor 41B and(ii) the capacitor 62 and the second capacitor 42 are serially connectedto each other so as to form a capacitor circuit.

As described above, a capacitor formed between the second electrode 15 cof the photoelectric conversion unit 15 and the upper electrode 62 u ofthe capacitor 62 may be used as a low-capacitance capacitor instead ofthe first capacitor 41. Also according to such a configuration, thesecond capacitor 42 that is a so-called MIS capacitor can be omitted aslong as a sufficiently large capacitance value is obtained by thecapacitor 62.

Note that the upper electrode 41 x may be extended to a region above theupper electrode 42 e of the second capacitor 42, for example, like theupper electrode 41 w illustrated in FIG. 20. However, a configuration inwhich the upper electrode 41 x does not overlap the upper electrode 42 eof the second capacitor 42 is more advantageous from the perspective ofreduction of noise and suppression of a decrease in conversion gain.

A method for producing the unit pixel cell 60B can be almost similar tothe method for producing the unit pixel cell 60A except for that apattern of a resist mask for forming the upper electrode 41 x and apattern of a resist mask for forming the wiring layer 6 s are different.Therefore, description of the method for producing the unit pixel cell60B is omitted.

Second Modification of Fourth Embodiment

FIG. 24 schematically illustrates a still another example of a devicestructure of a unit pixel cell. FIG. 25 illustrates an example of theway in which an upper electrode 62 u, a dielectric layer 62 d, and alower electrode 62 b are disposed in a case where a unit pixel cell 60Cillustrated in FIG. 24 is viewed from the normal to the semiconductorsubstrate 2. FIG. 24 is a diagram corresponding to a cross-sectionalview taken along the line XXIV-XXIV of FIG. 25. A main differencebetween the unit pixel cell 60C illustrated in FIGS. 24 and 25 and theunit pixel cell 60A described with reference to FIGS. 20 and 21 is thata low-capacitance capacitor 41C having a lower electrode 62 b as one ofelectrodes thereof is formed in an interlayer insulating layer insteadof the first capacitor 41.

In the unit pixel cell 60C illustrated in FIG. 24, a lower electrode 62b and an upper electrode 62 u are connected to a reset drain node 46 anda sensitivity adjustment wire 32, respectively, as in the unit pixelcell 60A described with reference to FIG. 20. The unit pixel cell 60Cdoes not have a first capacitor 41 in an interlayer insulating layer 4s, as in the unit pixel cell 60B described with reference to FIG. 22.

In the configuration illustrated in FIG. 24, a wiring layer 6 b formedin an interlayer insulating layer 4 b includes an electrode 6 bxdisposed between a via vc and a via vb. As schematically illustrated inFIGS. 24 and 25, the electrode 6 bx has a part that overlaps the lowerelectrode 62 b when viewed from the normal to the semiconductorsubstrate 2. That is, at least part of the electrode 6 bx faces at leastpart of the lower electrode 62 b via at least part of an interlayerinsulating layer 4 c. This forms the capacitor 41C between the capacitor62 and a wiring layer (the electrode 6 bx in this example) disposed inan interlayer insulating layer (the interlayer insulating layer 4 c inthis example). Of the interlayer insulating layer 4 c, a part sandwichedbetween the lower electrode 62 b and the electrode 6 bx functions as adielectric layer of the capacitor 41C. Since the lower electrode 62 bhas connection with the reset drain node 46 and the electrode 6 bx hasconnection with the second electrode 15 c, the capacitor 41C functionsin a manner similar to the first capacitor 41 described above. That is,in this example, (i) the capacitor 41C and (ii) the capacitor 62 and thesecond capacitor 42 are serially connected to form a capacitor circuit.

As described above, a capacitor may be formed between the capacitor 62and the wiring layer disposed in the interlayer insulating layer.According to such a configuration, a low-capacitance (e.g.,approximately 0.5 fF) capacitor can be relatively easily disposed in aunit pixel cell. In this example, part (the electrode 6 bx in thisexample) of the wiring layer 6 b is used as one of electrodes of thelow-capacitance capacitor, but the one of the electrodes of thelow-capacitance capacitor may be part of another wiring layer such as awiring layer 6 a or 6 s. Also in the configuration described withreference to FIGS. 24 and 25, a second capacitor 42 that is a so-calledMIS capacitor can be omitted as long as a sufficiently large capacitancevalue is obtained by the capacitor 62.

A method for producing the unit pixel cell 60C can be almost similar tothe method for producing the unit pixel cell 60A except for that apattern of a resist mask for forming the upper electrode 41 x and apattern of a resist mask for forming the electrode 6 bx are different.Therefore, description of the method for producing the unit pixel cell60C is omitted.

Fifth Embodiment

A camera system 105 according to the present embodiment is describedbelow with reference to FIG. 26.

FIG. 26 schematically illustrates an example of a configuration of thecamera system 105 according to the present embodiment. The camera system105 includes a lens optical system 601, an imaging device 602, a systemcontroller 603, and a camera signal processing unit 604.

The lens optical system 601 includes, for example, a lens for automaticfocus, a lens for zooming, and a diaphragm. The lens optical system 601collects light onto an imaging surface of the imaging device 602. Animaging device according to any one of the First through FourthEmbodiments described above can be widely used as the imaging device602.

The system controller 603 controls the entire camera system 105. Thesystem controller 603 is, for example, realized by a microcomputer.

The camera signal processing unit 604 functions as a signal processingcircuit that processes an output signal from the imaging device 602. Thecamera signal processing unit 604 performs processing such as gammacorrection, color interpolation processing, space interpolationprocessing, and auto white balance. The camera signal processing unit604 can be, for example, realized by a DSP (Digital Signal Processor).

According to the camera system according to the present embodiment,reset noise (kTC noise) at the time of readout can be properlysuppressed by using an imaging device according to any one of the Firstthrough Fourth Embodiments. As a result, an electric charge can beaccurately read out, and a good image can be acquired.

As described in detail in the First Embodiment, a camera system that cantake a photograph while switching between a mode in which a brightsubject can be imaged with low sensitivity and a mode in which a darksubject can be imaged with relatively high sensitivity can be provided.

According to the embodiments of the present disclosure, kTC noise can bereduced. Furthermore, the present disclosure is useful for a digitalcamera and the like since a dynamic range can be increased by a simpleconfiguration.

What is claimed is:
 1. An imaging device comprising: a semiconductorsubstrate; a photoelectric converter stacked on the semiconductorsubstrate, the photoelectric converter being configured to generate asignal through photoelectric conversion of incident light; a multilayerwiring structure located between the semiconductor substrate and thephotoelectric converter; and circuitry located in the multilayer wiringstructure and the semiconductor substrate, the circuitry beingconfigured to detect the signal, wherein the circuitry includes: a firstcapacitance element and a second capacitance element; and a firsttransistor including a first source and a first drain in thesemiconductor substrate and a first gate, the first capacitance elementincludes a first electrode, a second electrode, and a dielectric filmsandwiched between the first electrode and the second electrode, themultilayer wiring structure includes an insulating layer adjacent to thefirst capacitance element, and a permittivity of the dielectric film isgreater than a permittivity of the insulating layer.
 2. The imagingdevice according to claim 1, wherein at least one of the firstcapacitance element and the second capacitance element is electricallyconnected to the first gate without switching element intervention. 3.The imaging device according to claim 1, wherein at least one of thefirst capacitance element and the second capacitance element iselectrically connected to the first gate in a period in which the firsttransistor outputs a signal.
 4. The imaging device according to claim 1,wherein the circuitry includes a second transistor including a secondsource and a second drain, one of the second source and the second drainbeing electrically connected to the first electrode of the firstcapacitance element, and a conversion gain is switched by turning thesecond transistor on and off.
 5. The imaging device according to claim1, wherein the circuitry includes: a charge accumulation nodeelectrically connected to the first gate; and a second transistorincluding a second source and a second drain, one of the second sourceand the second drain is electrically connected to the chargeaccumulation node.
 6. The imaging device according to claim 1, whereinthe second capacitance element includes a third electrode and a fourthelectrode, and one of the third electrode and the fourth electrode iselectrically connected to one of the first electrode and the secondelectrode.
 7. An imaging device comprising: a semiconductor substrate; aphotoelectric converter stacked on the semiconductor substrate, thephotoelectric converter being configured to generate a signal throughphotoelectric conversion of incident light; a multilayer wiringstructure located between the semiconductor substrate and thephotoelectric converter; and circuitry located in the multilayer wiringstructure and the semiconductor substrate, the circuitry beingconfigured to detect the signal, wherein the circuitry includes: a firstcapacitance element; and a first transistor including a first source anda first drain in the semiconductor substrate and a first gate, the firstcapacitance element includes a first electrode, a second electrode, anda dielectric film sandwiched between the first electrode and the secondelectrode, the multilayer wiring structure includes an insulating layeradjacent to the first capacitance element, a permittivity of thedielectric film is greater than a permittivity of the insulating layer,and the first capacitance element has an electrical coupling to thefirst gate not through a switching element.
 8. An imaging devicecomprising: a semiconductor substrate; a photoelectric converter stackedon the semiconductor substrate, the photoelectric converter beingconfigured to generate a signal through photoelectric conversion ofincident light; a multilayer wiring structure located between thesemiconductor substrate and the photoelectric converter; and circuitrylocated in the multilayer wiring structure and the semiconductorsubstrate, the circuitry being configured to detect the signal, whereinthe circuitry includes: a first capacitance element; and a firsttransistor including a first source and a first drain in thesemiconductor substrate and a first gate, the first capacitance elementincludes a first electrode, a second electrode, and a dielectric filmsandwiched between the first electrode and the second electrode, themultilayer wiring structure includes an insulating layer adjacent to thefirst capacitance element, a permittivity of the dielectric film isgreater than a permittivity of the insulating layer, and the firstcapacitance element has an electrical coupling to the first gate in aperiod in which the first transistor outputs a signal.